Zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices

C. H. Chen; Y. F. Chen; An Shih; S. C. Lee; H. X. Jiang

doi:10.1063/1.1369389

Zone-folding effect on optical phonon in GaN/Al_0.2Ga_0.8N superlattices

C. H. Chen, Y. F. Chen, An Shih, S. C. Lee, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Optical properties of GaN/Al_0.2Ga_0.8N superlattices have been investigated by Raman scattering and photoluminescence measurements. It is found that the A₁(LO) phonon decreases in frequency with decreasing quantum-well width. The frequency shift is attributed to the effect of phonon zone folding. Through the study of photoluminescence, we show that our observation of the zone-folding effect on optical phonon in GaN/Al_0.2Ga_0.8N superlattices is due to the sharpness of the interfaces between barrier and well layers. The sharp interfaces prevent the appearance of mixed interface modes which mask the phonon effect of zone folding in previous reports.

Original language	English
Pages (from-to)	3035-3037
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	20
DOIs	https://doi.org/10.1063/1.1369389
State	Published - May 14 2001

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title = "Zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices",

abstract = "Optical properties of GaN/Al0.2Ga0.8N superlattices have been investigated by Raman scattering and photoluminescence measurements. It is found that the A1(LO) phonon decreases in frequency with decreasing quantum-well width. The frequency shift is attributed to the effect of phonon zone folding. Through the study of photoluminescence, we show that our observation of the zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices is due to the sharpness of the interfaces between barrier and well layers. The sharp interfaces prevent the appearance of mixed interface modes which mask the phonon effect of zone folding in previous reports.",

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T1 - Zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices

AU - Chen, C. H.

AU - Chen, Y. F.

AU - Shih, An

AU - Lee, S. C.

AU - Jiang, H. X.

PY - 2001/5/14

Y1 - 2001/5/14

N2 - Optical properties of GaN/Al0.2Ga0.8N superlattices have been investigated by Raman scattering and photoluminescence measurements. It is found that the A1(LO) phonon decreases in frequency with decreasing quantum-well width. The frequency shift is attributed to the effect of phonon zone folding. Through the study of photoluminescence, we show that our observation of the zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices is due to the sharpness of the interfaces between barrier and well layers. The sharp interfaces prevent the appearance of mixed interface modes which mask the phonon effect of zone folding in previous reports.

AB - Optical properties of GaN/Al0.2Ga0.8N superlattices have been investigated by Raman scattering and photoluminescence measurements. It is found that the A1(LO) phonon decreases in frequency with decreasing quantum-well width. The frequency shift is attributed to the effect of phonon zone folding. Through the study of photoluminescence, we show that our observation of the zone-folding effect on optical phonon in GaN/Al0.2Ga0.8N superlattices is due to the sharpness of the interfaces between barrier and well layers. The sharp interfaces prevent the appearance of mixed interface modes which mask the phonon effect of zone folding in previous reports.

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U2 - 10.1063/1.1369389

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M3 - Article

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SN - 0003-6951

VL - 78

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EP - 3037

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Zone-folding effect on optical phonon in GaN/Al_0.2Ga_0.8N superlattices

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