X-ray diffraction study of AlNAlGaN short period superlattices

A. Chandolu; S. Nikishin; M. Holtz; H. Temkin

doi:10.1063/1.2821358

X-ray diffraction study of AlNAlGaN short period superlattices

A. Chandolu, S. Nikishin, M. Holtz, H. Temkin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Short period superlattices of AlN Al0.08 Ga0.92 N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and ±1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode.

Original language	English
Article number	114909
Journal	Journal of Applied Physics
Volume	102
Issue number	11
DOIs	https://doi.org/10.1063/1.2821358
State	Published - 2007

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title = "X-ray diffraction study of AlNAlGaN short period superlattices",

abstract = "Short period superlattices of AlN Al0.08 Ga0.92 N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and ±1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode.",

author = "A. Chandolu and S. Nikishin and M. Holtz and H. Temkin",

note = "Funding Information: We acknowledge support from NSF (ECS-0304224 and ECS-0609416), THECB-ARP-003644-0014-2006, and the J. F Maddox Foundation. We also thank G. Kipshidze and B. Borisov for growth of samples.",

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doi = "10.1063/1.2821358",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - X-ray diffraction study of AlNAlGaN short period superlattices

AU - Chandolu, A.

AU - Nikishin, S.

AU - Holtz, M.

AU - Temkin, H.

N1 - Funding Information: We acknowledge support from NSF (ECS-0304224 and ECS-0609416), THECB-ARP-003644-0014-2006, and the J. F Maddox Foundation. We also thank G. Kipshidze and B. Borisov for growth of samples.

PY - 2007

Y1 - 2007

N2 - Short period superlattices of AlN Al0.08 Ga0.92 N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and ±1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode.

AB - Short period superlattices of AlN Al0.08 Ga0.92 N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and ±1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode.

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U2 - 10.1063/1.2821358

DO - 10.1063/1.2821358

M3 - Article

AN - SCOPUS:37149013294

SN - 0021-8979

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114909

ER -

X-ray diffraction study of AlNAlGaN short period superlattices

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