X-ray diffraction study of AlNAlGaN short period superlattices

A. Chandolu, S. Nikishin, M. Holtz, H. Temkin

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Short period superlattices of AlN Al0.08 Ga0.92 N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and ±1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode.

Original languageEnglish
Article number114909
JournalJournal of Applied Physics
Issue number11
StatePublished - 2007


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