X-ray diffraction and photoluminescence studies of InN grown by plasma-assisted molecular beam epitaxy with low free-carrier concentration

Engineering & Materials Science

• Photoluminescence 100%
• Molecular beam epitaxy 95%
• Carrier concentration 87%
• Electrons 62%
• X ray diffraction 60%
• Plasmas 56%
• Fermi level 35%
• Conduction bands 35%
• Lattice constants 30%
• Sapphire 27%
• Atomic force microscopy 26%
• Hydrostatic pressure 24%
• Diffraction 22%
• X rays 18%
• Residual stresses 17%
• Surface roughness 17%
• Temperature 16%
• Substrates 14%

Physics & Astronomy

• molecular beam epitaxy 52%
• photoluminescence 43%
• x rays 27%
• electrons 26%
• hydrostatics 22%
• hydrostatic pressure 20%
• templates 19%
• residual stress 18%
• x ray diffraction 17%
• conduction bands 17%
• sapphire 17%
• roughness 16%
• atomic force microscopy 15%
• room temperature 11%
• energy 6%

Chemistry

• Molecular Beam Epitaxy 88%
• Photoluminescence 47%
• Electron Particle 33%
• Fermi Level 23%
• Lattice Constant 22%
• Conduction Band 22%
• Reflection 16%
• Atomic Force Microscopy 16%
• Compound Mobility 15%
• Pressure 11%
• Ambient Reaction Temperature 11%
• Energy 9%