X-ray diffraction analysis of the defect structure in Al xGa 1-xN films grown by metalorganic chemical vapor deposition

Y. S. Park, K. H. Kim, J. J. Lee, H. S. Kim, T. W. Kang, H. X. Jiang, J. Y. Lin

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The reduction of the defects in Al xGa 1-xN films by increasing Al content was investigated. The films of 1 μm thickness were grown by metal organic chemical vapor deposition (MOCVD) on sapphire (0001) substrates with 20 nm low temperature GaN buffer layers. The grain size was calculated by using x-ray diffraction analysis, and the metal organic sources were trimethygallium (TMGa) and trimethylaluminum (TMAl). The results show that the dislocation density decreases with increasing Al contents up to 0.2.

Original languageEnglish
Pages (from-to)1853-1855
Number of pages3
JournalJournal of Materials Science
Volume39
Issue number5
DOIs
StatePublished - Mar 1 2004

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