Abstract
The reduction of the defects in Al xGa 1-xN films by increasing Al content was investigated. The films of 1 μm thickness were grown by metal organic chemical vapor deposition (MOCVD) on sapphire (0001) substrates with 20 nm low temperature GaN buffer layers. The grain size was calculated by using x-ray diffraction analysis, and the metal organic sources were trimethygallium (TMGa) and trimethylaluminum (TMAl). The results show that the dislocation density decreases with increasing Al contents up to 0.2.
Original language | English |
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Pages (from-to) | 1853-1855 |
Number of pages | 3 |
Journal | Journal of Materials Science |
Volume | 39 |
Issue number | 5 |
DOIs | |
State | Published - Mar 1 2004 |