@inproceedings{b16bdf7cc6584e2c8f5082231dbb6966,
title = "Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors",
abstract = "We have demonstrated a wireless hydrogen sensing system using commercially available wireless components and AlGaN/GaN High Electron Mobility Transistor (HEMTs) differential sensing diodes as the sensing devices. The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. Our sensors have a wide range of detection from ppm levels to ∼30%, with the added advantages of a very rapid response time within a couple of seconds, and rapid recovery. The sensors have shown good stability for more than 18 months in an outdoor field test. Currently, the wireless sensing system consists of 6 wireless sensor nodes and a base station. The wireless sensor node consists of a sensor, a power management system with back-up batteries in case of power outages and a wireless transceiver. The base station consists of a high sensitivity receiver and an in-house developed intelligent monitoring software that does basic data logging and tracking of each individual sensor. The software defines and implements the monitoring states, transitions, and actions of the hydrogen sensor network. Also, the software is able to warn the user of potential sensor failure, power outages and network failures through cell phone network and Internet. Real time responses of the sensors are displayed through a web site on the Internet.",
author = "X. Yu and C. Li and Low, {Z. N.} and J. Lin and Anderson, {T. J.} and Wang, {H. T.} and F. Ren and Wang, {Y. L.} and Chang, {C. Y.} and Pearton, {S. J.} and Hsu, {C. H.} and A. Osinsky and A. Dabiran and P. Chow and C. Balaban and J. Painter",
note = "Funding Information: The work at UF is partially supported by ONR (N00014-98-1-02-04, H. B. Dietrich), NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Glenn Research Center under grant NAG 3-2930 monitored by Timothy Smith and also by Florida Department of Environmental Protection, U.S. Dept. of Energy (DE-FG26-05R410962 by Jill Stoyshich). The authors would like to thank the management and technical team in the Greenway Ford, Orlando, Florida for their technical support. ; State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
year = "2009",
doi = "10.1149/1.2983168",
language = "English",
isbn = "9781566776530",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "127--137",
booktitle = "ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9",
edition = "7",
}