Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors

X. Yu, C. Li, Z. N. Low, J. Lin, T. J. Anderson, H. T. Wang, F. Ren, Y. L. Wang, C. Y. Chang, S. J. Pearton, C. H. Hsu, A. Osinsky, A. Dabiran, P. Chow, C. Balaban, J. Painter

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We have demonstrated a wireless hydrogen sensing system using commercially available wireless components and AlGaN/GaN High Electron Mobility Transistor (HEMTs) differential sensing diodes as the sensing devices. The active device in the differential pair is coated with 10 nm of Pt to enhance catalytic dissociation of molecular hydrogen, while the reference diode is coated with Ti/Au. Our sensors have a wide range of detection from ppm levels to ∼30%, with the added advantages of a very rapid response time within a couple of seconds, and rapid recovery. The sensors have shown good stability for more than 18 months in an outdoor field test. Currently, the wireless sensing system consists of 6 wireless sensor nodes and a base station. The wireless sensor node consists of a sensor, a power management system with back-up batteries in case of power outages and a wireless transceiver. The base station consists of a high sensitivity receiver and an in-house developed intelligent monitoring software that does basic data logging and tracking of each individual sensor. The software defines and implements the monitoring states, transitions, and actions of the hydrogen sensor network. Also, the software is able to warn the user of potential sensor failure, power outages and network failures through cell phone network and Internet. Real time responses of the sensors are displayed through a web site on the Internet.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
Pages127-137
Number of pages11
Edition7
DOIs
StatePublished - 2008
EventState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Publication series

NameECS Transactions
Number7
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

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