Wet etching silicon nanofins with (111)-oriented sidewalls

Engineering & Materials Science

• Wet etching 100%
• Etching 77%
• Ammonium hydroxide 60%
• Surface roughness 59%
• Silicon 56%
• Electron beam lithography 55%
• Atomic force microscopy 45%
• Silicon wafers 43%
• Alcohols 39%
• Surface active agents 39%
• Masks 33%
• Aspect ratio 33%

Physics & Astronomy

• fins 86%
• etching 54%
• silicon 38%
• isopropyl alcohol 34%
• etchants 29%
• shoulders 27%
• hydroxides 27%
• surfactants 22%
• aspect ratio 21%
• masks 20%
• surface roughness 20%
• lithography 20%
• roughness 19%
• atomic force microscopy 18%
• wafers 17%
• electron beams 17%

Chemistry

• Etching 64%
• Ammonium Hydroxide 28%
• Electron Beam 25%
• Surface Roughness 24%
• Atomic Force Microscopy 18%
• Surfactant 16%
• Surface 7%