Abstract
Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x to approximately 0.07) and InxGa1-xN/GaN (x to approximately 0.15-0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.
Original language | English |
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Pages (from-to) | 643-648 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 482 |
DOIs | |
State | Published - 1997 |
Event | Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997 |