Well thickness and doping effects, and room temperature emission mechanisms in InGaN/GaN and GaN/AlGaN multiple quantum wells

K. C. Zeng, M. Smith, J. Y. Lin, H. X. Jian, H. Tang, A. Salvador, W. Kim, H. Morkoc, M. Asif Khan

Research output: Contribution to journalConference article

Abstract

Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x to approximately 0.07) and InxGa1-xN/GaN (x to approximately 0.15-0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

Original languageEnglish
Pages (from-to)643-648
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
DOIs
StatePublished - 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

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