Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x to approximately 0.07) and InxGa1-xN/GaN (x to approximately 0.15-0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1997|
|Event||Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA|
Duration: Dec 1 1997 → Dec 4 1997