Well thickness and doping effects, and room temperature emission mechanisms in InGaN/GaN and GaN/AlGaN multiple quantum wells

K. C. Zeng; M. Smith; J. Y. Lin; H. X. Jian; H. Tang; A. Salvador; W. Kim; H. Morkoc; M. Asif Khan

doi:10.1557/proc-482-643

Well thickness and doping effects, and room temperature emission mechanisms in InGaN/GaN and GaN/AlGaN multiple quantum wells

K. C. Zeng, M. Smith, J. Y. Lin, H. X. Jian, H. Tang, A. Salvador, W. Kim, H. Morkoc, M. Asif Khan

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article

Abstract

Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/Al_xGa_1-xN (x to approximately 0.07) and In_xGa_1-xN/GaN (x to approximately 0.15-0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

Original language	English
Pages (from-to)	643-648
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-643
State	Published - 1997
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

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@article{f9178faad4164fd2ad94a79e02f2307a,

title = "Well thickness and doping effects, and room temperature emission mechanisms in InGaN/GaN and GaN/AlGaN multiple quantum wells",

abstract = "Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x to approximately 0.07) and InxGa1-xN/GaN (x to approximately 0.15-0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.",

author = "Zeng, {K. C.} and M. Smith and Lin, {J. Y.} and Jian, {H. X.} and H. Tang and A. Salvador and W. Kim and H. Morkoc and Khan, {M. Asif}",

year = "1997",

doi = "10.1557/proc-482-643",

language = "English",

volume = "482",

pages = "643--648",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "null ; Conference date: 01-12-1997 Through 04-12-1997",

}

Well thickness and doping effects, and room temperature emission mechanisms in InGaN/GaN and GaN/AlGaN multiple quantum wells. / Zeng, K. C.; Smith, M.; Lin, J. Y.; Jian, H. X.; Tang, H.; Salvador, A.; Kim, W.; Morkoc, H.; Khan, M. Asif.

In: Materials Research Society Symposium - Proceedings, Vol. 482, 1997, p. 643-648.

Research output: Contribution to journal › Conference article

TY - JOUR

T1 - Well thickness and doping effects, and room temperature emission mechanisms in InGaN/GaN and GaN/AlGaN multiple quantum wells

AU - Zeng, K. C.

AU - Smith, M.

AU - Lin, J. Y.

AU - Jian, H. X.

AU - Tang, H.

AU - Salvador, A.

AU - Kim, W.

AU - Morkoc, H.

AU - Khan, M. Asif

PY - 1997

Y1 - 1997

N2 - Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x to approximately 0.07) and InxGa1-xN/GaN (x to approximately 0.15-0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

AB - Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x to approximately 0.07) and InxGa1-xN/GaN (x to approximately 0.15-0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

UR - http://www.scopus.com/inward/record.url?scp=0031348161&partnerID=8YFLogxK

U2 - 10.1557/proc-482-643

DO - 10.1557/proc-482-643

M3 - Conference article

AN - SCOPUS:0031348161

VL - 482

SP - 643

EP - 648

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

Y2 - 1 December 1997 through 4 December 1997

ER -