VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

Changhong Chen, Yanhan Zhu, Yong Zhao, Joon Hwan Lee, Haiyan Wang, Ayrton Bernussi, Mark Holtz, Zhaoyang Fan

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

We report the epitaxial relationship of VO2 thin-films on c -plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between monoclinic VO2 and sapphire hexagon. The epitaxial relationship is determined to be VO2 [010] Al2 O 3 [0001] and VO2 (2- 02) Al2 O3 { 11 2- 0 }, with the in-plane lattice mismatch of 2.66% (tensile) along [2- 02] and the out-of-plane lattice mismatch of -2.19% (compressive). Terahertz measurements revealed that VO2 films have over fourfold change in transmission during the metal-insulator transition, indicating a strong potential for terahertz wave switching and modulation applications.

Original languageEnglish
Article number211905
JournalApplied Physics Letters
Volume97
Issue number21
DOIs
StatePublished - Nov 22 2010

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