Abstract
In monolayer graphene, substitutional doping during Growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.
Original language | English |
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Pages (from-to) | 999-1003 |
Number of pages | 5 |
Journal | Science |
Volume | 333 |
Issue number | 6045 |
DOIs | |
State | Published - Aug 19 2011 |