Visible and infrared emission from Er-doped III-N light emitting diodes

John M. Zavada, Ei Ei Nyein, Uwe Hömmerich, J. Li, J. Y. Lin, H. X. Jiang, P. Chow, Jian Wei Dong

Research output: Contribution to journalConference articlepeer-review


We report on the visible and infrared emission characteristics of Er-doped III-N light-emitting diodes (LEDs). Quantum well-like device structures were grown through a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) on c-plane sapphire substrates. The dual stage growth process was used to take advantage of the high quality of AlGaN layers produced by MOCVD and in situ doping of Er during MBE growth. The multilayer structures were processed into devices and LEDs with different sizes and geometric shapes were produced. Electroluminescence (EL) was observed under either forward or reverse bias conditions. Visible and infrared spectra displayed narrow emission lines representative of the Er3+ system. The temperature dependence of the spectra, which were measured from 100K to 300K, showed a stability in the visible emission intensity but a sharp decrease in the infrared intensity at room temperature. Based on light output vs current measurements, estimates of the excitation cross-section were obtained for visible EL emission.

Original languageEnglish
Article numberV3.3
Pages (from-to)59-66
Number of pages8
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2005
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 29 2005Mar 31 2005


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