Visible and infrared emission from Er-doped III-N light emitting diodes

John M. Zavada; Ei Ei Nyein; Uwe Hömmerich; J. Li; J. Y. Lin; H. X. Jiang; P. Chow; Jian Wei Dong

doi:10.1557/proc-866-v3.3

Visible and infrared emission from Er-doped III-N light emitting diodes

John M. Zavada, Ei Ei Nyein, Uwe Hömmerich, J. Li, J. Y. Lin, H. X. Jiang, P. Chow, Jian Wei Dong

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the visible and infrared emission characteristics of Er-doped III-N light-emitting diodes (LEDs). Quantum well-like device structures were grown through a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) on c-plane sapphire substrates. The dual stage growth process was used to take advantage of the high quality of AlGaN layers produced by MOCVD and in situ doping of Er during MBE growth. The multilayer structures were processed into devices and LEDs with different sizes and geometric shapes were produced. Electroluminescence (EL) was observed under either forward or reverse bias conditions. Visible and infrared spectra displayed narrow emission lines representative of the Er³⁺ system. The temperature dependence of the spectra, which were measured from 100K to 300K, showed a stability in the visible emission intensity but a sharp decrease in the infrared intensity at room temperature. Based on light output vs current measurements, estimates of the excitation cross-section were obtained for visible EL emission.

Original language	English
Article number	V3.3
Pages (from-to)	59-66
Number of pages	8
Journal	Materials Research Society Symposium Proceedings
Volume	866
DOIs	https://doi.org/10.1557/proc-866-v3.3
State	Published - 2005
Event	2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: Mar 29 2005 → Mar 31 2005

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@article{e76b5aeaae314e599ae9cb499e169570,

title = "Visible and infrared emission from Er-doped III-N light emitting diodes",

abstract = "We report on the visible and infrared emission characteristics of Er-doped III-N light-emitting diodes (LEDs). Quantum well-like device structures were grown through a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) on c-plane sapphire substrates. The dual stage growth process was used to take advantage of the high quality of AlGaN layers produced by MOCVD and in situ doping of Er during MBE growth. The multilayer structures were processed into devices and LEDs with different sizes and geometric shapes were produced. Electroluminescence (EL) was observed under either forward or reverse bias conditions. Visible and infrared spectra displayed narrow emission lines representative of the Er3+ system. The temperature dependence of the spectra, which were measured from 100K to 300K, showed a stability in the visible emission intensity but a sharp decrease in the infrared intensity at room temperature. Based on light output vs current measurements, estimates of the excitation cross-section were obtained for visible EL emission.",

author = "Zavada, {John M.} and Nyein, {Ei Ei} and Uwe H{\"o}mmerich and J. Li and Lin, {J. Y.} and Jiang, {H. X.} and P. Chow and Dong, {Jian Wei}",

year = "2005",

doi = "10.1557/proc-866-v3.3",

language = "English",

volume = "866",

pages = "59--66",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "null ; Conference date: 29-03-2005 Through 31-03-2005",

}

TY - JOUR

T1 - Visible and infrared emission from Er-doped III-N light emitting diodes

AU - Zavada, John M.

AU - Nyein, Ei Ei

AU - Hömmerich, Uwe

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Chow, P.

AU - Dong, Jian Wei

PY - 2005

Y1 - 2005

N2 - We report on the visible and infrared emission characteristics of Er-doped III-N light-emitting diodes (LEDs). Quantum well-like device structures were grown through a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) on c-plane sapphire substrates. The dual stage growth process was used to take advantage of the high quality of AlGaN layers produced by MOCVD and in situ doping of Er during MBE growth. The multilayer structures were processed into devices and LEDs with different sizes and geometric shapes were produced. Electroluminescence (EL) was observed under either forward or reverse bias conditions. Visible and infrared spectra displayed narrow emission lines representative of the Er3+ system. The temperature dependence of the spectra, which were measured from 100K to 300K, showed a stability in the visible emission intensity but a sharp decrease in the infrared intensity at room temperature. Based on light output vs current measurements, estimates of the excitation cross-section were obtained for visible EL emission.

AB - We report on the visible and infrared emission characteristics of Er-doped III-N light-emitting diodes (LEDs). Quantum well-like device structures were grown through a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) on c-plane sapphire substrates. The dual stage growth process was used to take advantage of the high quality of AlGaN layers produced by MOCVD and in situ doping of Er during MBE growth. The multilayer structures were processed into devices and LEDs with different sizes and geometric shapes were produced. Electroluminescence (EL) was observed under either forward or reverse bias conditions. Visible and infrared spectra displayed narrow emission lines representative of the Er3+ system. The temperature dependence of the spectra, which were measured from 100K to 300K, showed a stability in the visible emission intensity but a sharp decrease in the infrared intensity at room temperature. Based on light output vs current measurements, estimates of the excitation cross-section were obtained for visible EL emission.

UR - http://www.scopus.com/inward/record.url?scp=30544454172&partnerID=8YFLogxK

U2 - 10.1557/proc-866-v3.3

DO - 10.1557/proc-866-v3.3

M3 - Conference article

AN - SCOPUS:30544454172

SN - 0272-9172

VL - 866

SP - 59

EP - 66

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

M1 - V3.3

Y2 - 29 March 2005 through 31 March 2005

ER -

Visible and infrared emission from Er-doped III-N light emitting diodes

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