Vibrational dynamics of impurities in semiconductors: Phonon trapping and isotope effects

Stefan K. Estreicher

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Optical tools such as infra-red absorption, photoluminescence, or Raman spectroscopy have been used for decades to observe the localized vibrational modes associated with impurities in semiconductors. The frequencies of these modes slightly shift with the isotope of the impurity while host-atom isotopes often show up as shoulders in the spectra. These shifts and shoulders are precious indicators of the nature of the defect. But sometimes, very small isotope-related frequency shifts cause very large changes in vibrational lifetimes. Impurity-isotope effects have now been predicted to impact the thermal conductivity of semiconductors containing a few atomic percent of impurities. Impurity isotope effects can be surprisingly large.

Original languageEnglish
Title of host publicationDefects-Recognition, Imaging and Physics in Semiconductors XIV
PublisherTrans Tech Publications Ltd
Pages203-208
Number of pages6
ISBN (Print)9783037854426
DOIs
StatePublished - 2012
Event14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan
Duration: Sep 25 2011Sep 29 2011

Publication series

NameMaterials Science Forum
Volume725
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
CountryJapan
CityMiyazaki
Period09/25/1109/29/11

Keywords

  • Phonons
  • Theory
  • Thermal conductivity
  • Vibrational lifetimes

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