We present optical measurements of hexagonal AlN grown by gas-source molecular beam epitaxy on (111)-oriented silicon wafers. Fourier-transform infrared (FTIR) reflectance and absorption measurements are used to determine the E1- and A1-symmetry vibrational energies in AlN (TO and LO). FTIR reflectance data are modeled using a non-isotropic dielectric function. The phonon energies are also measured by Raman scattering, which includes the E2-symmetry phonons, as well as A1(TO), A1(LO), and E1(TO). Ellipsometry measurements between 0.73 and 6.60 eV allow us to determine the optical constants. The energy gap is found to lie between 6.1 and 6.2 eV.
|Number of pages||6|
|State||Published - 2000|
|Event||27th International Symposium on Compound Semiconductors - Monterey, CA, United States|
Duration: Oct 2 2000 → Oct 5 2000
|Conference||27th International Symposium on Compound Semiconductors|
|Period||10/2/00 → 10/5/00|