Vibrational and optical properties of AlN grown on Si(111)

M. Holtz, S. Zollner, T. Prokofyeva, M. Seon, J. Vanbuskirk, K. Copeland, A. Konkar, S. A. Nikishin, N. N. Faleev, H. Temkin

Research output: Contribution to conferencePaperpeer-review

Abstract

We present optical measurements of hexagonal AlN grown by gas-source molecular beam epitaxy on (111)-oriented silicon wafers. Fourier-transform infrared (FTIR) reflectance and absorption measurements are used to determine the E1- and A1-symmetry vibrational energies in AlN (TO and LO). FTIR reflectance data are modeled using a non-isotropic dielectric function. The phonon energies are also measured by Raman scattering, which includes the E2-symmetry phonons, as well as A1(TO), A1(LO), and E1(TO). Ellipsometry measurements between 0.73 and 6.60 eV allow us to determine the optical constants. The energy gap is found to lie between 6.1 and 6.2 eV.

Original languageEnglish
Pages251-256
Number of pages6
StatePublished - 2000
Event27th International Symposium on Compound Semiconductors - Monterey, CA, United States
Duration: Oct 2 2000Oct 5 2000

Conference

Conference27th International Symposium on Compound Semiconductors
CountryUnited States
CityMonterey, CA
Period10/2/0010/5/00

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