Unique optical properties of AlGaN alloys and related ultraviolet emitters

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

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The optical properties of Al xGa 1-xN alloys were investigated using deep UV photoluminescence spectroscopy. A decrease in emission intensity with polarization of E⊥c and the degree of polarization was observed with an increase in x. This decrease and increase was observed to be caused as a consequence that the dominant band edge emission in GaN (AlN) was with polarization of E⊥c(E∥c). The results show that UV emitters with AlGaN alloys as active layers have different characteristic properties from InGaN and other semiconductor emitters.

Original languageEnglish
Pages (from-to)5264-5266
Number of pages3
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 21 2004


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