Abstract
The optical properties of Al xGa 1-xN alloys were investigated using deep UV photoluminescence spectroscopy. A decrease in emission intensity with polarization of E⊥c and the degree of polarization was observed with an increase in x. This decrease and increase was observed to be caused as a consequence that the dominant band edge emission in GaN (AlN) was with polarization of E⊥c(E∥c). The results show that UV emitters with AlGaN alloys as active layers have different characteristic properties from InGaN and other semiconductor emitters.
Original language | English |
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Pages (from-to) | 5264-5266 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 25 |
DOIs | |
State | Published - Jun 21 2004 |