Uniaxial stress apparatus for deep level transient spectroscopy studies

C. D. Lamp; J. W. Farmer; J. M. Meese

doi:10.1063/1.1137725

Uniaxial stress apparatus for deep level transient spectroscopy studies

C. D. Lamp, J. W. Farmer, J. M. Meese

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

An apparatus for applying uniaxial stress >10⁹ Pa at temperatures of 20-300 K is described. The apparatus is used with a deep level transient spectroscopy (DLTS) experiment, but it has more general applications. We have used this apparatus to observe the splitting of a DLTS defect level at E_c -0.17 eV in neutron irradiated silicon and have determined from the splitting, as a function of stress orientation, that the defect symmetry is consistent with the oxygen-vacancy A-center.

Original language	English
Pages (from-to)	210-212
Number of pages	3
Journal	Review of Scientific Instruments
Volume	55
Issue number	2
DOIs	https://doi.org/10.1063/1.1137725
State	Published - 1984

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title = "Uniaxial stress apparatus for deep level transient spectroscopy studies",

abstract = "An apparatus for applying uniaxial stress >109 Pa at temperatures of 20-300 K is described. The apparatus is used with a deep level transient spectroscopy (DLTS) experiment, but it has more general applications. We have used this apparatus to observe the splitting of a DLTS defect level at Ec -0.17 eV in neutron irradiated silicon and have determined from the splitting, as a function of stress orientation, that the defect symmetry is consistent with the oxygen-vacancy A-center.",

author = "Lamp, {C. D.} and Farmer, {J. W.} and Meese, {J. M.}",

year = "1984",

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AU - Lamp, C. D.

AU - Farmer, J. W.

AU - Meese, J. M.

PY - 1984

Y1 - 1984

N2 - An apparatus for applying uniaxial stress >109 Pa at temperatures of 20-300 K is described. The apparatus is used with a deep level transient spectroscopy (DLTS) experiment, but it has more general applications. We have used this apparatus to observe the splitting of a DLTS defect level at Ec -0.17 eV in neutron irradiated silicon and have determined from the splitting, as a function of stress orientation, that the defect symmetry is consistent with the oxygen-vacancy A-center.

AB - An apparatus for applying uniaxial stress >109 Pa at temperatures of 20-300 K is described. The apparatus is used with a deep level transient spectroscopy (DLTS) experiment, but it has more general applications. We have used this apparatus to observe the splitting of a DLTS defect level at Ec -0.17 eV in neutron irradiated silicon and have determined from the splitting, as a function of stress orientation, that the defect symmetry is consistent with the oxygen-vacancy A-center.

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DO - 10.1063/1.1137725

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JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

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Uniaxial stress apparatus for deep level transient spectroscopy studies

Abstract

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