Uniaxial stress apparatus for deep level transient spectroscopy studies

C. D. Lamp, J. W. Farmer, J. M. Meese

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

An apparatus for applying uniaxial stress >109 Pa at temperatures of 20-300 K is described. The apparatus is used with a deep level transient spectroscopy (DLTS) experiment, but it has more general applications. We have used this apparatus to observe the splitting of a DLTS defect level at Ec -0.17 eV in neutron irradiated silicon and have determined from the splitting, as a function of stress orientation, that the defect symmetry is consistent with the oxygen-vacancy A-center.

Original languageEnglish
Pages (from-to)210-212
Number of pages3
JournalReview of Scientific Instruments
Volume55
Issue number2
DOIs
StatePublished - 1984

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