An apparatus for applying uniaxial stress >109 Pa at temperatures of 20-300 K is described. The apparatus is used with a deep level transient spectroscopy (DLTS) experiment, but it has more general applications. We have used this apparatus to observe the splitting of a DLTS defect level at Ec -0.17 eV in neutron irradiated silicon and have determined from the splitting, as a function of stress orientation, that the defect symmetry is consistent with the oxygen-vacancy A-center.
|Number of pages||3|
|Journal||Review of Scientific Instruments|
|State||Published - 1984|