Ultraviolet photoluminescence from Gd-implanted AlN epilayers

J. M. Zavada, N. Nepal, J. Y. Lin, H. X. Jiang, E. Brown, U. Hömmerich, J. Hite, G. T. Thaler, C. R. Abernathy, S. J. Pearton, R. Gwilliam

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Abstract

Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ∼6× 1014 cm-2. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

Original languageEnglish
Article number152107
JournalApplied Physics Letters
Volume89
Issue number15
DOIs
StatePublished - 2006

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    Zavada, J. M., Nepal, N., Lin, J. Y., Jiang, H. X., Brown, E., Hömmerich, U., Hite, J., Thaler, G. T., Abernathy, C. R., Pearton, S. J., & Gwilliam, R. (2006). Ultraviolet photoluminescence from Gd-implanted AlN epilayers. Applied Physics Letters, 89(15), [152107]. https://doi.org/10.1063/1.2357552