Ultraviolet photoluminescence from Gd-implanted AlN epilayers

J. M. Zavada; N. Nepal; J. Y. Lin; H. X. Jiang; E. Brown; U. Hömmerich; J. Hite; G. T. Thaler; C. R. Abernathy; S. J. Pearton; R. Gwilliam

doi:10.1063/1.2357552

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

J. M. Zavada, N. Nepal, J. Y. Lin, H. X. Jiang, E. Brown, U. Hömmerich, J. Hite, G. T. Thaler, C. R. Abernathy, S. J. Pearton, R. Gwilliam

Electrical and Computer Engineering

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Abstract

Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ∼6× 1014 cm-2. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

Original language	English
Article number	152107
Journal	Applied Physics Letters
Volume	89
Issue number	15
DOIs	https://doi.org/10.1063/1.2357552
State	Published - 2006

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@article{d57851fd0f454bb3beaf94efa04a17f1,

title = "Ultraviolet photoluminescence from Gd-implanted AlN epilayers",

abstract = "Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ∼6× 1014 cm-2. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.",

author = "Zavada, {J. M.} and N. Nepal and Lin, {J. Y.} and Jiang, {H. X.} and E. Brown and U. H{\"o}mmerich and J. Hite and Thaler, {G. T.} and Abernathy, {C. R.} and Pearton, {S. J.} and R. Gwilliam",

note = "Funding Information: Research at Kansas State University and at University of Florida was partially supported by ARO.",

year = "2006",

doi = "10.1063/1.2357552",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "15",

}

TY - JOUR

T1 - Ultraviolet photoluminescence from Gd-implanted AlN epilayers

AU - Zavada, J. M.

AU - Nepal, N.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Brown, E.

AU - Hömmerich, U.

AU - Hite, J.

AU - Thaler, G. T.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Gwilliam, R.

N1 - Funding Information: Research at Kansas State University and at University of Florida was partially supported by ARO.

PY - 2006

Y1 - 2006

N2 - Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ∼6× 1014 cm-2. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

AB - Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of ∼6× 1014 cm-2. Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.

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U2 - 10.1063/1.2357552

DO - 10.1063/1.2357552

M3 - Article

AN - SCOPUS:33749998111

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 152107

ER -

Ultraviolet photoluminescence from Gd-implanted AlN epilayers

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