Ultraviolet and blue emission properties of Tm doped AlGaN and AlN

Ei Ei Nyein; U. Hömmerich; J. M. Zavada; D. S. Lee; A. J. Steckl; N. Nepal; J. Y. Lin; H. X. Jiang

Ultraviolet and blue emission properties of Tm doped AlGaN and AlN

Ei Ei Nyein, U. Hömmerich, J. M. Zavada, D. S. Lee, A. J. Steckl, N. Nepal, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the ultraviolet (UV) and blue emission properties of Tm doped AlGaN/AlN thin films under above- and below bandgap excitation. UV (∼300-350 nm) and blue (∼465 nm) emission lines of Tm³⁺ ions are of interest for potential applications in chemical/biological sensing, full color displays, and solid-state lightening.

Original language	English
Pages (from-to)	1281-1282
Number of pages	2
Journal	OSA Trends in Optics and Photonics Series
Volume	96 A
State	Published - 2004
Event	Conference on Lasers and Electro-Optics, CLEO - Washington, DC, United States Duration: May 17 2004 → May 19 2004

Cite this

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title = "Ultraviolet and blue emission properties of Tm doped AlGaN and AlN",

abstract = "We report on the ultraviolet (UV) and blue emission properties of Tm doped AlGaN/AlN thin films under above- and below bandgap excitation. UV (∼300-350 nm) and blue (∼465 nm) emission lines of Tm3+ ions are of interest for potential applications in chemical/biological sensing, full color displays, and solid-state lightening.",

author = "Nyein, {Ei Ei} and U. H{\"o}mmerich and Zavada, {J. M.} and Lee, {D. S.} and Steckl, {A. J.} and N. Nepal and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2004",

language = "English",

volume = "96 A",

pages = "1281--1282",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics, CLEO ; Conference date: 17-05-2004 Through 19-05-2004",

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TY - JOUR

T1 - Ultraviolet and blue emission properties of Tm doped AlGaN and AlN

AU - Nyein, Ei Ei

AU - Hömmerich, U.

AU - Zavada, J. M.

AU - Lee, D. S.

AU - Steckl, A. J.

AU - Nepal, N.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2004

Y1 - 2004

N2 - We report on the ultraviolet (UV) and blue emission properties of Tm doped AlGaN/AlN thin films under above- and below bandgap excitation. UV (∼300-350 nm) and blue (∼465 nm) emission lines of Tm3+ ions are of interest for potential applications in chemical/biological sensing, full color displays, and solid-state lightening.

AB - We report on the ultraviolet (UV) and blue emission properties of Tm doped AlGaN/AlN thin films under above- and below bandgap excitation. UV (∼300-350 nm) and blue (∼465 nm) emission lines of Tm3+ ions are of interest for potential applications in chemical/biological sensing, full color displays, and solid-state lightening.

UR - http://www.scopus.com/inward/record.url?scp=33645240487&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33645240487

SN - 1094-5695

VL - 96 A

SP - 1281

EP - 1282

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Conference on Lasers and Electro-Optics, CLEO

Y2 - 17 May 2004 through 19 May 2004

ER -

Ultraviolet and blue emission properties of Tm doped AlGaN and AlN

Abstract

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