TY - JOUR
T1 - Ultrafast relaxation of hot photoexcited carriers in GaAs
AU - Ferry, D. K.
AU - Osman, M. A.
AU - Joshi, R.
AU - Kann, M. J.
N1 - Funding Information:
The authors express their appreciation for many stimulating discussions with Drs. Lugli and Reggian~ of the University of Modena, Drs. Ravaioli and P~tz of the University of Illinois, and Dr. Sankey of ASU. This work was supported by the Office of Naval Research.
PY - 1988
Y1 - 1988
N2 - The roles of carrier-carrier interactions and non-equilibrium phonons on the ultrafast relaxation of photoexcited carriers in GaAs are examined. At low carrier concentrations, the e-ph interaction is the main energy loss channel for hot electrons, while at high carrier concentrations, the e-h interaction is the primary energy loss channel. This latter result follows from the high e-h scattering rate, the screening of the e-ph interaction, and the high efficiency of hole-phonon scattering through the unscreened deformation potential interaction. The electron energy-loss rates through the e-h interaction increases as the excitation energies and intensities are increased. In two-dimensional systems, the e-h interaction further complicates the problem since the transverse optical modes out are also driven out of equilibrium by their interaction with the holes.
AB - The roles of carrier-carrier interactions and non-equilibrium phonons on the ultrafast relaxation of photoexcited carriers in GaAs are examined. At low carrier concentrations, the e-ph interaction is the main energy loss channel for hot electrons, while at high carrier concentrations, the e-h interaction is the primary energy loss channel. This latter result follows from the high e-h scattering rate, the screening of the e-ph interaction, and the high efficiency of hole-phonon scattering through the unscreened deformation potential interaction. The electron energy-loss rates through the e-h interaction increases as the excitation energies and intensities are increased. In two-dimensional systems, the e-h interaction further complicates the problem since the transverse optical modes out are also driven out of equilibrium by their interaction with the holes.
UR - http://www.scopus.com/inward/record.url?scp=0023308805&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(88)90306-1
DO - 10.1016/0038-1101(88)90306-1
M3 - Article
AN - SCOPUS:0023308805
VL - 31
SP - 401
EP - 406
JO - Solid State Electronics
JF - Solid State Electronics
SN - 0038-1101
IS - 3-4
ER -