In this paper, we examine a number of factors concerning the relaxation of hot photoexcited electron-hole plasmas in semiconductors. Analytical solutions are utilized to probe the influence of the light-holes on the longer time behavior. The role of the electron-hole interaction and dynamic, self-consistent screening is discussed. Then, the scattering to the satellite L and × valleys is examined in the absence of the inter-carrier interactions. Ensemble Monte Carlo calculations used in this latter approach indicate that the time constant for relaxation of the central valley electrons due to inter-valley scattering cannot be faster than 80-100 fs.
|Number of pages||8|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - Aug 22 1988|