Two FeH pairs in n -type Si and their implications: A theoretical study

N. Gonzalez Szwacki, M. Sanati, S. K. Estreicher

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Experimental evidence for interstitial {FeH} pairs in n -type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first match those of the TSCAP center but are incompatible with the EPR center. The second is a possible candidate for the EPR center. If true, this suggests that high-temperature anneals can introduce substitutional Fe in concentrations higher than commonly believed.

Original languageEnglish
Article number113202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number11
DOIs
StatePublished - Sep 10 2008

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