Two FeH pairs in n -type Si and their implications: A theoretical study

N. Gonzalez Szwacki; M. Sanati; S. K. Estreicher

doi:10.1103/PhysRevB.78.113202

Two FeH pairs in n -type Si and their implications: A theoretical study

N. Gonzalez Szwacki, M. Sanati, S. K. Estreicher

Physics

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9 Scopus citations

Abstract

Experimental evidence for interstitial {FeH} pairs in n -type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first match those of the TSCAP center but are incompatible with the EPR center. The second is a possible candidate for the EPR center. If true, this suggests that high-temperature anneals can introduce substitutional Fe in concentrations higher than commonly believed.

Original language	English
Article number	113202
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	78
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.78.113202
State	Published - Sep 10 2008

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AU - Sanati, M.

AU - Estreicher, S. K.

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AB - Experimental evidence for interstitial {FeH} pairs in n -type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first match those of the TSCAP center but are incompatible with the EPR center. The second is a possible candidate for the EPR center. If true, this suggests that high-temperature anneals can introduce substitutional Fe in concentrations higher than commonly believed.

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JO - Physical Review B - Condensed Matter and Materials Physics

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IS - 11

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ER -

Two FeH pairs in n -type Si and their implications: A theoretical study

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