Two-dimensional electron gas in AlGaN/GaN heterostructures

J. Z. Li; J. Y. Lin; H. X. Jiang; M. A. Khan; Q. Chen

doi:10.1116/1.589424

Two-dimensional electron gas in AlGaN/GaN heterostructures

J. Z. Li, J. Y. Lin, H. X. Jiang, M. A. Khan, Q. Chen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system.

Original language	English
Pages (from-to)	1117-1120
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	4
DOIs	https://doi.org/10.1116/1.589424
State	Published - 1997

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abstract = "The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system.",

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AU - Li, J. Z.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Khan, M. A.

AU - Chen, Q.

PY - 1997

Y1 - 1997

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AB - The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system.

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ER -

Two-dimensional electron gas in AlGaN/GaN heterostructures

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