Two-dimensional electron gas in AlGaN/GaN heterostructures

J. Z. Li, J. Y. Lin, H. X. Jiang, M. A. Khan, Q. Chen

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system.

Original languageEnglish
Pages (from-to)1117-1120
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number4
DOIs
StatePublished - 1997

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