Tunable photoluminescence and an enhanced photoelectric response of Mn2+-doped CsPbCl3 perovskite nanocrystals: Via pressure-induced structure evolution

Junkai Zhang, Sihang Ji, Yanzhang Ma, Renquan Guan, Xiaoxin Wu, Xin Qu, Bingmin Yan, Dongzhou Zhang, Jialong Zhao, Jinghai Yang

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Mn2+:CsPbCl3 nanocrystals (NCs) were synthesized using a modified one-pot injection method, which exhibits significantly improved thermal stability. For the first time, the pressure-treated optical and structural properties of synthetic Mn2+:CsPbCl3 NCs were further investigated, and their associated intriguing electrical and photoelectric properties were revealed from impedance spectra and photocurrent measurements under compression. The pressure-dependent photoluminescence experienced an initial redshift before 1.7 GPa followed by a continuous blueshift, as evidenced by the bandgap shifts. High-pressure XRD spectra uncovered a cubic-to-orthorhombic structural transition at about 1.1 GPa and subsequent amorphization upon further compression, which was fully reversible. Furthermore, the sample annealing from 340 K drove grain growth and decreased grain boundary resistance at ambient pressure. The compression further decreased the grain boundary barrier and improved the electrical conductivity (up to ∼10-2 Ω-1 cm-1) of the thermally annealed Mn2+:CsPbCl3 NC surface. Simultaneous photocurrent enhancement of thermally annealed NCs was also achieved as expected, and reached optimal performance at 0.7 GPa. Strikingly, after the pressure cycling (loading-releasing), the results show that thermally annealed Mn2+:CsPbCl3 NCs gained preservable higher electrical conductivity (∼10 times increase) and an improved photoelectric response compared to the ambient state before compression. This work proves that high pressure is useful for opening the versatility in the structure and properties of metal-halide perovskite nanocrystals leading to a promising way for superior optoelectronic materials-by-design.

Original languageEnglish
Pages (from-to)11660-11670
Number of pages11
JournalNanoscale
Volume11
Issue number24
DOIs
StatePublished - Jun 28 2019

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