Transport properties of highly conductive n-type Al-rich Al xGa 1-xN (x≥0.7)

M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin, H. X. Jiang

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Abstract

We report here the growth and transport studies of conductive n-type Al xGa 1-xN alloys with high Al contents (x ≥ 0.7). Si-doped Al xGa 1-xN alloys were grown by metalorganic chemical vapor deposition on AlN-epilayer/sapphire substrates with very smooth surface. Low n-type resistivities have been obtained for Al-rich Al xGa 1-xN alloys. The resistivity was observed to increase rapidly with increasing x due to the deepening of the Si donor energy level. Transport measurements have indicated that we have achieved n-type conduction in pure AlN. From the temperature dependence of the resistivity, the donor activation energy was estimated to vary from 23 to 180 meV as x was increased from 0.7 to 1.0.

Original languageEnglish
Pages (from-to)3769-3771
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number17
DOIs
StatePublished - Oct 25 2004

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