Transition metal ion implantation into AlGaN

R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang, J. Kelly, R. Rairigh, A. F. Hebard, J. M. Zavada, R. G. Wilson

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26 Scopus citations

Abstract

The transition metal ion implantation into AlGaN was studied. The optical, structural and magnetic properties of AlGaN were studied after implantation and annealing at 1000 °C. The results showed ferromagnetic ordering for Co-implanted samples and no band-edge photoluminescence in all the samples.

Original languageEnglish
Pages (from-to)4956-4960
Number of pages5
JournalJournal of Applied Physics
Volume94
Issue number8
DOIs
StatePublished - Oct 15 2003

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