Transition metal ion implantation into AlGaN

R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang, J. Kelly, R. Rairigh, A. F. Hebard, J. M. Zavada, R. G. Wilson

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


The transition metal ion implantation into AlGaN was studied. The optical, structural and magnetic properties of AlGaN were studied after implantation and annealing at 1000 °C. The results showed ferromagnetic ordering for Co-implanted samples and no band-edge photoluminescence in all the samples.

Original languageEnglish
Pages (from-to)4956-4960
Number of pages5
JournalJournal of Applied Physics
Issue number8
StatePublished - Oct 15 2003


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