Transition metal ion implantation into AlGaN

R. M. Frazier; G. T. Thaler; C. R. Abernathy; S. J. Pearton; M. L. Nakarmi; K. B. Nam; J. Y. Lin; H. X. Jiang; J. Kelly; R. Rairigh; A. F. Hebard; J. M. Zavada; R. G. Wilson

doi:10.1063/1.1613375

Transition metal ion implantation into AlGaN

R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang, J. Kelly, R. Rairigh, A. F. Hebard, J. M. Zavada, R. G. Wilson

Electrical and Computer Engineering

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Abstract

The transition metal ion implantation into AlGaN was studied. The optical, structural and magnetic properties of AlGaN were studied after implantation and annealing at 1000 °C. The results showed ferromagnetic ordering for Co-implanted samples and no band-edge photoluminescence in all the samples.

Original language	English
Pages (from-to)	4956-4960
Number of pages	5
Journal	Journal of Applied Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.1613375
State	Published - Oct 15 2003

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@article{3570f0a7e9f541eebce87866c3c60aaf,

title = "Transition metal ion implantation into AlGaN",

abstract = "The transition metal ion implantation into AlGaN was studied. The optical, structural and magnetic properties of AlGaN were studied after implantation and annealing at 1000 °C. The results showed ferromagnetic ordering for Co-implanted samples and no band-edge photoluminescence in all the samples.",

author = "Frazier, {R. M.} and Thaler, {G. T.} and Abernathy, {C. R.} and Pearton, {S. J.} and Nakarmi, {M. L.} and Nam, {K. B.} and Lin, {J. Y.} and Jiang, {H. X.} and J. Kelly and R. Rairigh and Hebard, {A. F.} and Zavada, {J. M.} and Wilson, {R. G.}",

year = "2003",

month = oct,

day = "15",

doi = "10.1063/1.1613375",

language = "English",

volume = "94",

pages = "4956--4960",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "8",

}

TY - JOUR

T1 - Transition metal ion implantation into AlGaN

AU - Frazier, R. M.

AU - Thaler, G. T.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Nakarmi, M. L.

AU - Nam, K. B.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Kelly, J.

AU - Rairigh, R.

AU - Hebard, A. F.

AU - Zavada, J. M.

AU - Wilson, R. G.

PY - 2003/10/15

Y1 - 2003/10/15

N2 - The transition metal ion implantation into AlGaN was studied. The optical, structural and magnetic properties of AlGaN were studied after implantation and annealing at 1000 °C. The results showed ferromagnetic ordering for Co-implanted samples and no band-edge photoluminescence in all the samples.

AB - The transition metal ion implantation into AlGaN was studied. The optical, structural and magnetic properties of AlGaN were studied after implantation and annealing at 1000 °C. The results showed ferromagnetic ordering for Co-implanted samples and no band-edge photoluminescence in all the samples.

UR - http://www.scopus.com/inward/record.url?scp=10744231128&partnerID=8YFLogxK

U2 - 10.1063/1.1613375

DO - 10.1063/1.1613375

M3 - Article

AN - SCOPUS:10744231128

SN - 0021-8979

VL - 94

SP - 4956

EP - 4960

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Transition metal ion implantation into AlGaN

Abstract

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