Transient performance of SiC MOSFETs as a function of temperature

Kevin Lawson, Stephen B. Bayne

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

This research was completed to study the effects of extreme transient conditions on Silicon Carbide MOSFET devices. Two different transient conditions that are common in power converters were studied in this paper. The first is effects of voltage rise time, or dV/dt, on these devices. The second is the effects of current pulses with short pulse width and high peak currents. Both of these tests were conducted at temperatures of 150 °C to determine the performance of these devices in high stress environments. For both of these experiments, testing apparatus had to be designed and built to create these specific conditions.

Original languageEnglish
Article number5976105
Pages (from-to)1124-1129
Number of pages6
JournalIEEE Transactions on Dielectrics and Electrical Insulation
Volume18
Issue number4
DOIs
StatePublished - Aug 2011

Keywords

  • DC-DC power conversion
  • MOS devices
  • RLC circuits
  • silicon compounds

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