Transient performance of SiC MOSFETs as a function of temperature

Kevin Lawson; Stephen B. Bayne

doi:10.1109/TDEI.2011.5976105

Transient performance of SiC MOSFETs as a function of temperature

Kevin Lawson, Stephen B. Bayne

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This research was completed to study the effects of extreme transient conditions on Silicon Carbide MOSFET devices. Two different transient conditions that are common in power converters were studied in this paper. The first is effects of voltage rise time, or dV/dt, on these devices. The second is the effects of current pulses with short pulse width and high peak currents. Both of these tests were conducted at temperatures of 150 °C to determine the performance of these devices in high stress environments. For both of these experiments, testing apparatus had to be designed and built to create these specific conditions.

Original language	English
Article number	5976105
Pages (from-to)	1124-1129
Number of pages	6
Journal	IEEE Transactions on Dielectrics and Electrical Insulation
Volume	18
Issue number	4
DOIs	https://doi.org/10.1109/TDEI.2011.5976105
State	Published - Aug 2011

Keywords

DC-DC power conversion
MOS devices
RLC circuits
silicon compounds

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10.1109/TDEI.2011.5976105

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Transient performance of SiC MOSFETs as a function of temperature

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