Abstract
This research was completed to study the effects of extreme transient conditions on Silicon Carbide MOSFET devices. Two different transient conditions that are common in power converters were studied in this paper. The first is effects of voltage rise time, or dV/dt, on these devices. The second is the effects of current pulses with short pulse width and high peak currents. Both of these tests were conducted at temperatures of 150 °C to determine the performance of these devices in high stress environments. For both of these experiments, testing apparatus had to be designed and built to create these specific conditions.
| Original language | English |
|---|---|
| Article number | 5976105 |
| Pages (from-to) | 1124-1129 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Dielectrics and Electrical Insulation |
| Volume | 18 |
| Issue number | 4 |
| DOIs | |
| State | Published - Aug 2011 |
Keywords
- DC-DC power conversion
- MOS devices
- RLC circuits
- silicon compounds
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Cite this
Lawson, K., & Bayne, S. B. (2011). Transient performance of SiC MOSFETs as a function of temperature. IEEE Transactions on Dielectrics and Electrical Insulation, 18(4), 1124-1129. [5976105]. https://doi.org/10.1109/TDEI.2011.5976105