Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches

P. Kayasit; R. P. Joshi; N. E. Islam; E. Schamiloglu; J. Gaudet

doi:10.1063/1.1335824

Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches

P. Kayasit, R. P. Joshi, N. E. Islam, E. Schamiloglu, J. Gaudet

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Simulations have been performed to determine the internal temperature profiles of high-power GaAs photoconductive switches in the presence of a current filament. No thermal instability is predicted below a power generation density level of about 1.3 ×10¹⁴ W/m³. This prediction is in keeping with recent experimental data on photoconductive semiconductor switch devices. It is shown that this power dissipation density threshold for stability exists under both dc and transient conditions. A simple model provides qualitative support for the power density threshold, and an explanation of the filamentary current radii that have been observed experimentally.

Original language	English
Pages (from-to)	1411-1417
Number of pages	7
Journal	Journal of Applied Physics
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.1335824
State	Published - Jan 15 2001

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abstract = "Simulations have been performed to determine the internal temperature profiles of high-power GaAs photoconductive switches in the presence of a current filament. No thermal instability is predicted below a power generation density level of about 1.3 ×1014 W/m3. This prediction is in keeping with recent experimental data on photoconductive semiconductor switch devices. It is shown that this power dissipation density threshold for stability exists under both dc and transient conditions. A simple model provides qualitative support for the power density threshold, and an explanation of the filamentary current radii that have been observed experimentally.",

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AU - Kayasit, P.

AU - Joshi, R. P.

AU - Islam, N. E.

AU - Schamiloglu, E.

AU - Gaudet, J.

PY - 2001/1/15

Y1 - 2001/1/15

N2 - Simulations have been performed to determine the internal temperature profiles of high-power GaAs photoconductive switches in the presence of a current filament. No thermal instability is predicted below a power generation density level of about 1.3 ×1014 W/m3. This prediction is in keeping with recent experimental data on photoconductive semiconductor switch devices. It is shown that this power dissipation density threshold for stability exists under both dc and transient conditions. A simple model provides qualitative support for the power density threshold, and an explanation of the filamentary current radii that have been observed experimentally.

AB - Simulations have been performed to determine the internal temperature profiles of high-power GaAs photoconductive switches in the presence of a current filament. No thermal instability is predicted below a power generation density level of about 1.3 ×1014 W/m3. This prediction is in keeping with recent experimental data on photoconductive semiconductor switch devices. It is shown that this power dissipation density threshold for stability exists under both dc and transient conditions. A simple model provides qualitative support for the power density threshold, and an explanation of the filamentary current radii that have been observed experimentally.

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Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches

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