Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches

P. Kayasit, R. P. Joshi, N. E. Islam, E. Schamiloglu, J. Gaudet

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Simulations have been performed to determine the internal temperature profiles of high-power GaAs photoconductive switches in the presence of a current filament. No thermal instability is predicted below a power generation density level of about 1.3 ×1014 W/m3. This prediction is in keeping with recent experimental data on photoconductive semiconductor switch devices. It is shown that this power dissipation density threshold for stability exists under both dc and transient conditions. A simple model provides qualitative support for the power density threshold, and an explanation of the filamentary current radii that have been observed experimentally.

Original languageEnglish
Pages (from-to)1411-1417
Number of pages7
JournalJournal of Applied Physics
Volume89
Issue number2
DOIs
StatePublished - Jan 15 2001

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