Transient analysis of Silicon Carbide MOSFET switches

Kevin Lawson, Stephen B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This research was conducted to determine the transient performance of Silicon Carbide MOSFET devices. The device under test for these results is a CREE CMF20120D D-MOSFET rated for a blocking voltage of 1200V and a forward conduction current of 20A. The first test involves testing the limit of voltage rise time, or the dV/dt of these devices to determine when the device turns itself on. The second test studies the effects of large current pulses, 10 the rated current, on these devices to determine how well these devices are able to handle over current situations. For both of these tests a test bed had to be designed and built.

Original languageEnglish
Title of host publicationProceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Pages30-33
Number of pages4
DOIs
StatePublished - 2010
Event2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 - Atlanta, GA, United States
Duration: May 23 2010May 27 2010

Publication series

NameProceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

Conference

Conference2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Country/TerritoryUnited States
CityAtlanta, GA
Period05/23/1005/27/10

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