TY - GEN
T1 - Transient analysis of Silicon Carbide MOSFET switches
AU - Lawson, Kevin
AU - Bayne, Stephen B.
PY - 2010
Y1 - 2010
N2 - This research was conducted to determine the transient performance of Silicon Carbide MOSFET devices. The device under test for these results is a CREE CMF20120D D-MOSFET rated for a blocking voltage of 1200V and a forward conduction current of 20A. The first test involves testing the limit of voltage rise time, or the dV/dt of these devices to determine when the device turns itself on. The second test studies the effects of large current pulses, 10 the rated current, on these devices to determine how well these devices are able to handle over current situations. For both of these tests a test bed had to be designed and built.
AB - This research was conducted to determine the transient performance of Silicon Carbide MOSFET devices. The device under test for these results is a CREE CMF20120D D-MOSFET rated for a blocking voltage of 1200V and a forward conduction current of 20A. The first test involves testing the limit of voltage rise time, or the dV/dt of these devices to determine when the device turns itself on. The second test studies the effects of large current pulses, 10 the rated current, on these devices to determine how well these devices are able to handle over current situations. For both of these tests a test bed had to be designed and built.
UR - http://www.scopus.com/inward/record.url?scp=80051753677&partnerID=8YFLogxK
U2 - 10.1109/IPMHVC.2010.5958288
DO - 10.1109/IPMHVC.2010.5958288
M3 - Conference contribution
AN - SCOPUS:80051753677
SN - 9781424471294
T3 - Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
SP - 30
EP - 33
BT - Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Y2 - 23 May 2010 through 27 May 2010
ER -