Transient analysis of Silicon Carbide MOSFET switches

Kevin Lawson; Stephen B. Bayne

doi:10.1109/IPMHVC.2010.5958288

Transient analysis of Silicon Carbide MOSFET switches

Kevin Lawson, Stephen B. Bayne

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

This research was conducted to determine the transient performance of Silicon Carbide MOSFET devices. The device under test for these results is a CREE CMF20120D D-MOSFET rated for a blocking voltage of 1200V and a forward conduction current of 20A. The first test involves testing the limit of voltage rise time, or the dV/dt of these devices to determine when the device turns itself on. The second test studies the effects of large current pulses, 10 the rated current, on these devices to determine how well these devices are able to handle over current situations. For both of these tests a test bed had to be designed and built.

Original language	English
Title of host publication	Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Pages	30-33
Number of pages	4
DOIs	https://doi.org/10.1109/IPMHVC.2010.5958288
State	Published - 2010
Event	2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010 - Atlanta, GA, United States Duration: May 23 2010 → May 27 2010

Publication series

Name	Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

Conference

Conference	2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010
Country	United States
City	Atlanta, GA
Period	05/23/10 → 05/27/10

Access to Document

10.1109/IPMHVC.2010.5958288

Link to publication in Scopus

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Cite this

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title = "Transient analysis of Silicon Carbide MOSFET switches",

abstract = "This research was conducted to determine the transient performance of Silicon Carbide MOSFET devices. The device under test for these results is a CREE CMF20120D D-MOSFET rated for a blocking voltage of 1200V and a forward conduction current of 20A. The first test involves testing the limit of voltage rise time, or the dV/dt of these devices to determine when the device turns itself on. The second test studies the effects of large current pulses, 10 the rated current, on these devices to determine how well these devices are able to handle over current situations. For both of these tests a test bed had to be designed and built.",

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language = "English",

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Lawson, K & Bayne, SB 2010, Transient analysis of Silicon Carbide MOSFET switches. in Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010., 5958288, Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010, pp. 30-33, 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010, Atlanta, GA, United States, 05/23/10. https://doi.org/10.1109/IPMHVC.2010.5958288

Transient analysis of Silicon Carbide MOSFET switches. / Lawson, Kevin; Bayne, Stephen B.

Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010. 2010. p. 30-33 5958288 (Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - This research was conducted to determine the transient performance of Silicon Carbide MOSFET devices. The device under test for these results is a CREE CMF20120D D-MOSFET rated for a blocking voltage of 1200V and a forward conduction current of 20A. The first test involves testing the limit of voltage rise time, or the dV/dt of these devices to determine when the device turns itself on. The second test studies the effects of large current pulses, 10 the rated current, on these devices to determine how well these devices are able to handle over current situations. For both of these tests a test bed had to be designed and built.

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