TY - GEN
T1 - Toward the development of an efficient bulk semi-insulating GaN photoconductive switch
AU - Meyers, Vincent
AU - Mauch, Daniel
AU - Kuryatkov, Vladimir
AU - Nikishin, Sergey
AU - Dickens, James
AU - Neuber, Andreas
AU - Ness, Richard
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/2
Y1 - 2017/7/2
N2 - Photoconductive semiconductor switches (PCSS) made from bulk, semi-insulating GaN have been fabricated and tested under pulse-charged conditions. Switching response and photocurrent efficiency of GaN PCSSs triggered by sub-10 ns, 355 nm laser pulses is reported. It is shown that fast rise time (<300 ns) voltage pulses can be used to charge a GaN PCSS to fields well beyond the DC breakdown field strength of GaN and improve switching performance. GaN's wide band gap, breakdown field strength, and electron mobility make it a material superior to SiC and far superior to GaAs for PCSS applications, though historically these materials have dominated PCSS research due to their relative ease of fabrication. Recent improvements to crystal quality and wafer size have allowed GaN and more recently semi-insulating GaN to play an increasing role in high-power and high-voltage solid state devices.
AB - Photoconductive semiconductor switches (PCSS) made from bulk, semi-insulating GaN have been fabricated and tested under pulse-charged conditions. Switching response and photocurrent efficiency of GaN PCSSs triggered by sub-10 ns, 355 nm laser pulses is reported. It is shown that fast rise time (<300 ns) voltage pulses can be used to charge a GaN PCSS to fields well beyond the DC breakdown field strength of GaN and improve switching performance. GaN's wide band gap, breakdown field strength, and electron mobility make it a material superior to SiC and far superior to GaAs for PCSS applications, though historically these materials have dominated PCSS research due to their relative ease of fabrication. Recent improvements to crystal quality and wafer size have allowed GaN and more recently semi-insulating GaN to play an increasing role in high-power and high-voltage solid state devices.
UR - http://www.scopus.com/inward/record.url?scp=85054251109&partnerID=8YFLogxK
U2 - 10.1109/PPC.2017.8291269
DO - 10.1109/PPC.2017.8291269
M3 - Conference contribution
AN - SCOPUS:85054251109
SN - 9781509057481
T3 - IEEE International Pulsed Power Conference
BT - 2017 IEEE 21st International Conference on Pulsed Power, PPC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st IEEE International Conference on Pulsed Power, PPC 2017
Y2 - 18 June 2017 through 22 June 2017
ER -