Total ionizing dose effects on data retention capabilities of battery-backed CMOS SRAM

Dhanya Nair, Richard Gale, Tanja Karp

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Data retention capabilities of commercial battery-backed static random access memories (SRAMs) exposed to different ionizing dose are investigated. Pattern imprinting is observed for devices exposed to a total dose of 50 kR and above. Room temperature annealing and recovery is also recorded. A model for the pattern imprinting behavior in SRAMs is presented based on the general understanding of defects produced in MOSFETs due to ionizing radiation.

Original languageEnglish
Article number6519974
Pages (from-to)2611-2616
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number4
DOIs
StatePublished - 2013

Keywords

  • Interface traps
  • oxide traps
  • pattern imprint
  • radiation effects
  • static random access memories (SRAMs)
  • total ionizing dose effects

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