Total ionizing dose effects on data retention capabilities of battery-backed CMOS SRAM

Dhanya Nair; Richard Gale; Tanja Karp

doi:10.1109/TNS.2013.2258039

Total ionizing dose effects on data retention capabilities of battery-backed CMOS SRAM

Dhanya Nair, Richard Gale, Tanja Karp

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Data retention capabilities of commercial battery-backed static random access memories (SRAMs) exposed to different ionizing dose are investigated. Pattern imprinting is observed for devices exposed to a total dose of 50 kR and above. Room temperature annealing and recovery is also recorded. A model for the pattern imprinting behavior in SRAMs is presented based on the general understanding of defects produced in MOSFETs due to ionizing radiation.

Original language	English
Article number	6519974
Pages (from-to)	2611-2616
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	60
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2013.2258039
State	Published - 2013

Keywords

Interface traps
oxide traps
pattern imprint
radiation effects
static random access memories (SRAMs)
total ionizing dose effects

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10.1109/TNS.2013.2258039

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abstract = "Data retention capabilities of commercial battery-backed static random access memories (SRAMs) exposed to different ionizing dose are investigated. Pattern imprinting is observed for devices exposed to a total dose of 50 kR and above. Room temperature annealing and recovery is also recorded. A model for the pattern imprinting behavior in SRAMs is presented based on the general understanding of defects produced in MOSFETs due to ionizing radiation.",

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AB - Data retention capabilities of commercial battery-backed static random access memories (SRAMs) exposed to different ionizing dose are investigated. Pattern imprinting is observed for devices exposed to a total dose of 50 kR and above. Room temperature annealing and recovery is also recorded. A model for the pattern imprinting behavior in SRAMs is presented based on the general understanding of defects produced in MOSFETs due to ionizing radiation.

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KW - oxide traps

KW - pattern imprint

KW - radiation effects

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Total ionizing dose effects on data retention capabilities of battery-backed CMOS SRAM

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Keywords

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