@inproceedings{f255307b105f4f22bcd84f98f5d7bfa7,
title = "Time-resolved photoluminescence studies of Mg-doped AlN epilayers",
abstract = "Mg-doped AlN epilayers grown by metalorganic chemical vapor deposition have been studied by deep UV time-resolved photoluminescence (PL) spectroscopy. A PL emission line at 6.02 eV has been observed at 10 K in Mg-doped AlN, which is about 40 meV below the free-exciton (FX) transition in undoped AlN epilayer. Temperature dependent measurement of the PL intensity of this emission line also reveals a binding energy of 40 meV. This transition line is believed to be due to the recombination of an exciton bound to neutral Mg acceptor (I 1) with a binding energy, E bx of 40 meV. The recombination lifetime of the I 1 transition in Mg doped AlN have been measured to be 130 ps, which is close to the expected value. Excitation intensity dependence of time-resolved PL for Mg-doped AlN epilayer is also measured to understand carrier and exciton dynamics.",
keywords = "Carrier dynamics, Exciton, Lifetime, Mg-doped AlN, Time-resolved PL, Ultrafast spectroscopy",
author = "N. Nepal and Nakarmi, {M. L.} and Lin, {J. Y.} and Jiang, {H. X.}",
year = "2006",
doi = "10.1117/12.651856",
language = "English",
isbn = "0819461601",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X",
note = "null ; Conference date: 23-01-2006 Through 25-01-2006",
}