Time-resolved photoluminescence studies of Mg-doped AlN epilayers

N. Nepal, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Mg-doped AlN epilayers grown by metalorganic chemical vapor deposition have been studied by deep UV time-resolved photoluminescence (PL) spectroscopy. A PL emission line at 6.02 eV has been observed at 10 K in Mg-doped AlN, which is about 40 meV below the free-exciton (FX) transition in undoped AlN epilayer. Temperature dependent measurement of the PL intensity of this emission line also reveals a binding energy of 40 meV. This transition line is believed to be due to the recombination of an exciton bound to neutral Mg acceptor (I 1) with a binding energy, E bx of 40 meV. The recombination lifetime of the I 1 transition in Mg doped AlN have been measured to be 130 ps, which is close to the expected value. Excitation intensity dependence of time-resolved PL for Mg-doped AlN epilayer is also measured to understand carrier and exciton dynamics.

Original languageEnglish
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials X
StatePublished - 2006
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA, United States
Duration: Jan 23 2006Jan 25 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceUltrafast Phenomena in Semiconductors and Nanostructure Materials X
Country/TerritoryUnited States
CitySan Jose, CA


  • Carrier dynamics
  • Exciton
  • Lifetime
  • Mg-doped AlN
  • Time-resolved PL
  • Ultrafast spectroscopy


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