Time-resolved photoluminescence (PL) spectroscopy has be used to investigate indium-rich InGaN alloys grown on sapphire substrates by metal organic chemical vapor deposition. Photoluminescence measurement indicates two dominant emission lines originating from phase-separated high- and low-indium-content regions. Temperature and excitation intensity dependence of the two main emission lines in these InGaN alloys have been measured. Temperature and energy dependence of PL decay lifetime show clearly different decay behaviour for the two main lines. Our results show that photo-excited carriers are deeply localized in the high indium regions while photo-excited carriers can be transferred within the low-indium-content regions as well as to high-content regions.