Time-resolved photoluminescence studies of indium-rich InGaN alloys

Guang De Chen, You Zhang Zhu, Guo Jun Yan, Jin She Yuan, K. H. Kim, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

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Abstract

Time-resolved photoluminescence (PL) spectroscopy has be used to investigate indium-rich InGaN alloys grown on sapphire substrates by metal organic chemical vapor deposition. Photoluminescence measurement indicates two dominant emission lines originating from phase-separated high- and low-indium-content regions. Temperature and excitation intensity dependence of the two main emission lines in these InGaN alloys have been measured. Temperature and energy dependence of PL decay lifetime show clearly different decay behaviour for the two main lines. Our results show that photo-excited carriers are deeply localized in the high indium regions while photo-excited carriers can be transferred within the low-indium-content regions as well as to high-content regions.

Original languageEnglish
Pages (from-to)472-474
Number of pages3
JournalChinese Physics Letters
Volume22
Issue number2
DOIs
StatePublished - Feb 2005

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