Time-resolved photoluminescence (PL) spectroscopy has been used to study the radiative recombination of excitons bound to ionized donors in GaN doped with both Mg and Si at concentrations of 5 X 1018/cm3 and 1.5 X 1017/cm3, respectively. Low temperature (T∼10K) time-resolved, as well as integrated PL spectra, identify an ionized donor-bound (Si) exciton peak (D+X) approximately 11.5 meV below and a neutral acceptor-bound exciton (A0X) 20.5 meV below the free exciton peak. Rapid decay of the free exciton emission (≤20 ps) implies that excitons are quickly captured by acceptors and ionized donors. We find the (A0X) emission lifetime is consistent with previous measurements for GaN:Mg epilayers, while the (D+X) lifetime of 160 ps is longer than that of the well studied neutral donor-bound exciton (D0X). The measured (D+X) lifetime, in comparison with (D0X) and (A0X), suggests that the state is stable at low temperature.