Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN

R. A. Mair, J. Li, S. K. Duan, J. Y. Lin, H. X. Jiang

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32 Scopus citations

Abstract

Time-resolved photoluminescence (PL) spectroscopy has been used to study the radiative recombination of excitons bound to ionized donors in GaN doped with both Mg and Si at concentrations of 5 X 1018/cm3 and 1.5 X 1017/cm3, respectively. Low temperature (T∼10K) time-resolved, as well as integrated PL spectra, identify an ionized donor-bound (Si) exciton peak (D+X) approximately 11.5 meV below and a neutral acceptor-bound exciton (A0X) 20.5 meV below the free exciton peak. Rapid decay of the free exciton emission (≤20 ps) implies that excitons are quickly captured by acceptors and ionized donors. We find the (A0X) emission lifetime is consistent with previous measurements for GaN:Mg epilayers, while the (D+X) lifetime of 160 ps is longer than that of the well studied neutral donor-bound exciton (D0X). The measured (D+X) lifetime, in comparison with (D0X) and (A0X), suggests that the state is stable at low temperature.

Original languageEnglish
Pages (from-to)513-515
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number4
DOIs
StatePublished - Jan 25 1999

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