Time-resolved photoluminescence studies of AlxGa1 - xN alloys

H. S. Kim; R. A. Mair; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.126000

Time-resolved photoluminescence studies of Al_xGa_{1 - x}N alloys

H. S. Kim, R. A. Mair, J. Li, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

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141 Scopus citations

Abstract

The optical properties of Al_xGa_{1 - x}N alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al content, the low-temperature PL decay lifetime increases with Al content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the Al_xGa_{1 - x}N alloys. The Al-content dependence of the energy-tail-state distribution parameter E₀, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and, consequently, increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

Original language	English
Pages (from-to)	1252-1254
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	10
DOIs	https://doi.org/10.1063/1.126000
State	Published - Mar 6 2000

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title = "Time-resolved photoluminescence studies of AlxGa1 - xN alloys",

abstract = "The optical properties of AlxGa1 - xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al content, the low-temperature PL decay lifetime increases with Al content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the AlxGa1 - xN alloys. The Al-content dependence of the energy-tail-state distribution parameter E0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and, consequently, increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.",

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T1 - Time-resolved photoluminescence studies of AlxGa1 - xN alloys

AU - Kim, H. S.

AU - Mair, R. A.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2000/3/6

Y1 - 2000/3/6

N2 - The optical properties of AlxGa1 - xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al content, the low-temperature PL decay lifetime increases with Al content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the AlxGa1 - xN alloys. The Al-content dependence of the energy-tail-state distribution parameter E0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and, consequently, increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

AB - The optical properties of AlxGa1 - xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al content, the low-temperature PL decay lifetime increases with Al content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the AlxGa1 - xN alloys. The Al-content dependence of the energy-tail-state distribution parameter E0, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and, consequently, increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

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Time-resolved photoluminescence studies of Al_xGa_{1 - x}N alloys

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