Three carbon pairs in Si

A. Docaj, S. K. Estreicher

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Carbon impurities in Si are common in floating-zone and cast-Si materials. The simplest and most discussed carbon complex is the interstitial- substitutional C iC s pair, which readily forms when self-interstitials are present in the material. This pair has three possible configurations, each of which is electrically active. The less common C sC s pair has been studied in irradiated material but has also recently been seen in as-grown C-rich cast-Si, which is commonly used to fabricate solar cells. The third pair consists of two interstitial C atoms: C iC i. Although its formation probability is low for several reasons, the C iC i pair is very stable and electrically inactive. In this contribution, we report preliminary results of first-principles calculations of these three C pairs in Si. The structures, binding energies, vibrational spectra, and electrical activity are predicted.

Original languageEnglish
Pages (from-to)2981-2984
Number of pages4
JournalPhysica B: Condensed Matter
Issue number15
StatePublished - Aug 1 2012


  • Carbon pairs
  • Silicon
  • Theory


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