Thermoelectric properties of Inx Ga1-x N alloys

B. N. Pantha; R. Dahal; J. Li; J. Y. Lin; H. X. Jiang; G. Pomrenke

doi:10.1063/1.2839309

Thermoelectric properties of Inx Ga1-x N alloys

B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, G. Pomrenke

Research output: Contribution to journal › Article › peer-review

108 Scopus citations

Abstract

Thermoelectric (TE) properties of Inx Ga1-x N alloys grown by metal organic chemical vapor deposition have been investigated. It was found that as indium concentration increases, the thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36 Ga0.64 N alloy, which is comparable to those of SiGe based alloys. The results indicate that InGaN alloys could be potentially important TE materials for many applications, especially for prolonged TE device operation at high temperatures, such as for recovery of waste heat from automobile, aircrafts, and power plants due to their superior physical properties, including the ability of operating at high temperature/high power conditions, high mechanical strength and stability, and radiation hardness.

Original language	English
Article number	042112
Journal	Applied Physics Letters
Volume	92
Issue number	4
DOIs	https://doi.org/10.1063/1.2839309
State	Published - 2008

Access to Document

10.1063/1.2839309

Fingerprint Dive into the research topics of 'Thermoelectric properties of Inx Ga1-x N alloys'. Together they form a unique fingerprint.

Cite this

@article{b9d511b5399f4db9af1483133294032d,

title = "Thermoelectric properties of Inx Ga1-x N alloys",

abstract = "Thermoelectric (TE) properties of Inx Ga1-x N alloys grown by metal organic chemical vapor deposition have been investigated. It was found that as indium concentration increases, the thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36 Ga0.64 N alloy, which is comparable to those of SiGe based alloys. The results indicate that InGaN alloys could be potentially important TE materials for many applications, especially for prolonged TE device operation at high temperatures, such as for recovery of waste heat from automobile, aircrafts, and power plants due to their superior physical properties, including the ability of operating at high temperature/high power conditions, high mechanical strength and stability, and radiation hardness.",

author = "Pantha, {B. N.} and R. Dahal and J. Li and Lin, {J. Y.} and Jiang, {H. X.} and G. Pomrenke",

year = "2008",

doi = "10.1063/1.2839309",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "4",

}

TY - JOUR

T1 - Thermoelectric properties of Inx Ga1-x N alloys

AU - Pantha, B. N.

AU - Dahal, R.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Pomrenke, G.

PY - 2008

Y1 - 2008

N2 - Thermoelectric (TE) properties of Inx Ga1-x N alloys grown by metal organic chemical vapor deposition have been investigated. It was found that as indium concentration increases, the thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36 Ga0.64 N alloy, which is comparable to those of SiGe based alloys. The results indicate that InGaN alloys could be potentially important TE materials for many applications, especially for prolonged TE device operation at high temperatures, such as for recovery of waste heat from automobile, aircrafts, and power plants due to their superior physical properties, including the ability of operating at high temperature/high power conditions, high mechanical strength and stability, and radiation hardness.

AB - Thermoelectric (TE) properties of Inx Ga1-x N alloys grown by metal organic chemical vapor deposition have been investigated. It was found that as indium concentration increases, the thermal conductivity decreases and power factor increases, which leads to an increase in the TE figure of merit (ZT). The value of ZT was found to be 0.08 at 300 K and reached 0.23 at 450 K for In0.36 Ga0.64 N alloy, which is comparable to those of SiGe based alloys. The results indicate that InGaN alloys could be potentially important TE materials for many applications, especially for prolonged TE device operation at high temperatures, such as for recovery of waste heat from automobile, aircrafts, and power plants due to their superior physical properties, including the ability of operating at high temperature/high power conditions, high mechanical strength and stability, and radiation hardness.

UR - http://www.scopus.com/inward/record.url?scp=38849157131&partnerID=8YFLogxK

U2 - 10.1063/1.2839309

DO - 10.1063/1.2839309

M3 - Article

AN - SCOPUS:38849157131

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042112

ER -