Thermoelectric properties of In 0.3Ga 0.7N alloys

B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, G. Pomrenke

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

We report on the experimental investigation of the potential of InGaN alloys as thermoelectric (TE) materials. We have grown undoped and Si-doped In 0.3Ga 0.7N alloys by metalorganic chemical vapor deposition and measured the Seebeck coefficient and electrical conductivity of the grown films with the aim of maximizing the power factor (P). It was found that P decreases as electron concentration (n) increases. The maximum value for P was found to be 7.3 × 10 -4 W/m K 2 at 750 K in an undoped sample with corresponding values of Seebeck coefficient and electrical conductivity of 280 μV/K and 93?(Ω cm) -1, respectively. Further enhancement in P is expected by improving the InGaN material quality and conductivity control by reducing background electron concentration.

Original languageEnglish
Pages (from-to)1132-1135
Number of pages4
JournalJournal of Electronic Materials
Volume38
Issue number7
DOIs
StatePublished - Jul 2009

Keywords

  • Electrical conductivity
  • InGaN
  • Power factor
  • Seebeck coefficient
  • Thermoelectric (TE)

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