Thermoelectric properties of In 0.3Ga 0.7N alloys

B. N. Pantha; R. Dahal; J. Li; J. Y. Lin; H. X. Jiang; G. Pomrenke

doi:10.1007/s11664-009-0676-8

Thermoelectric properties of In _0.3Ga _0.7N alloys

B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, G. Pomrenke

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Abstract

We report on the experimental investigation of the potential of InGaN alloys as thermoelectric (TE) materials. We have grown undoped and Si-doped In _0.3Ga _0.7N alloys by metalorganic chemical vapor deposition and measured the Seebeck coefficient and electrical conductivity of the grown films with the aim of maximizing the power factor (P). It was found that P decreases as electron concentration (n) increases. The maximum value for P was found to be 7.3 × 10 ^-4 W/m K ² at 750 K in an undoped sample with corresponding values of Seebeck coefficient and electrical conductivity of 280 μV/K and 93?(Ω cm) ^-1, respectively. Further enhancement in P is expected by improving the InGaN material quality and conductivity control by reducing background electron concentration.

Original language	English
Pages (from-to)	1132-1135
Number of pages	4
Journal	Journal of Electronic Materials
Volume	38
Issue number	7
DOIs	https://doi.org/10.1007/s11664-009-0676-8
State	Published - Jul 2009

Keywords

Electrical conductivity
InGaN
Power factor
Seebeck coefficient
Thermoelectric (TE)

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title = "Thermoelectric properties of In 0.3Ga 0.7N alloys",

abstract = "We report on the experimental investigation of the potential of InGaN alloys as thermoelectric (TE) materials. We have grown undoped and Si-doped In 0.3Ga 0.7N alloys by metalorganic chemical vapor deposition and measured the Seebeck coefficient and electrical conductivity of the grown films with the aim of maximizing the power factor (P). It was found that P decreases as electron concentration (n) increases. The maximum value for P was found to be 7.3 × 10 -4 W/m K 2 at 750 K in an undoped sample with corresponding values of Seebeck coefficient and electrical conductivity of 280 μV/K and 93?(Ω cm) -1, respectively. Further enhancement in P is expected by improving the InGaN material quality and conductivity control by reducing background electron concentration.",

keywords = "Electrical conductivity, InGaN, Power factor, Seebeck coefficient, Thermoelectric (TE)",

author = "Pantha, {B. N.} and R. Dahal and J. Li and Lin, {J. Y.} and Jiang, {H. X.} and G. Pomrenke",

note = "Funding Information: This work was funded in part by the US Air Force Office for Scientific Research (Grant No. FA9550-06-1-0441) and Department of Energy (Award No. 96ER45604).",

year = "2009",

month = jul,

doi = "10.1007/s11664-009-0676-8",

language = "English",

volume = "38",

pages = "1132--1135",

journal = "Journal of Electronic Materials",

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T1 - Thermoelectric properties of In 0.3Ga 0.7N alloys

AU - Pantha, B. N.

AU - Dahal, R.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Pomrenke, G.

N1 - Funding Information: This work was funded in part by the US Air Force Office for Scientific Research (Grant No. FA9550-06-1-0441) and Department of Energy (Award No. 96ER45604).

PY - 2009/7

Y1 - 2009/7

N2 - We report on the experimental investigation of the potential of InGaN alloys as thermoelectric (TE) materials. We have grown undoped and Si-doped In 0.3Ga 0.7N alloys by metalorganic chemical vapor deposition and measured the Seebeck coefficient and electrical conductivity of the grown films with the aim of maximizing the power factor (P). It was found that P decreases as electron concentration (n) increases. The maximum value for P was found to be 7.3 × 10 -4 W/m K 2 at 750 K in an undoped sample with corresponding values of Seebeck coefficient and electrical conductivity of 280 μV/K and 93?(Ω cm) -1, respectively. Further enhancement in P is expected by improving the InGaN material quality and conductivity control by reducing background electron concentration.

AB - We report on the experimental investigation of the potential of InGaN alloys as thermoelectric (TE) materials. We have grown undoped and Si-doped In 0.3Ga 0.7N alloys by metalorganic chemical vapor deposition and measured the Seebeck coefficient and electrical conductivity of the grown films with the aim of maximizing the power factor (P). It was found that P decreases as electron concentration (n) increases. The maximum value for P was found to be 7.3 × 10 -4 W/m K 2 at 750 K in an undoped sample with corresponding values of Seebeck coefficient and electrical conductivity of 280 μV/K and 93?(Ω cm) -1, respectively. Further enhancement in P is expected by improving the InGaN material quality and conductivity control by reducing background electron concentration.

KW - Electrical conductivity

KW - InGaN

KW - Power factor

KW - Seebeck coefficient

KW - Thermoelectric (TE)

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U2 - 10.1007/s11664-009-0676-8

DO - 10.1007/s11664-009-0676-8

M3 - Article

AN - SCOPUS:67650457571

SN - 0361-5235

VL - 38

SP - 1132

EP - 1135

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Thermoelectric properties of In _0.3Ga _0.7N alloys

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Keywords

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