Thermoelectric properties of Er-doped InGaN alloys for high temperature applications

K. Aryal, I. W. Feng, B. N. Pantha, J. Li, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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Thermoelectric (TE) properties of erbium-silicon co-doped In xGa 1-xN alloys (In xGa 1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5×10 19 cm -3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In 0.10Ga 0.90N alloys. A room temperature ZT value of ∼0.05 was obtained in In 0.14Ga 0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

Original languageEnglish
Title of host publicationEnergy Harvesting - Recent Advances in Materials, Devices and Applications
Number of pages6
StatePublished - 2012
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2011 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA


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