Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine

V. A. Elyukhin, G. García-Salgado, R. Peña-Sierra, S. A. Nikishin

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A thermodynamic model of low-temperature molecular beam epitaxy of gallium nitride (GaN) with hydrazine was developed. The incident and desorbed fluxes were considered as a one-dimensional ideal gas. The thermodynamic affinity was used in order to estimate the deviation from thermodynamic equilibrium at the growth reactions.

Original languageEnglish
Pages (from-to)5185-5190
Number of pages6
JournalJournal of Applied Physics
Volume93
Issue number9
DOIs
StatePublished - May 1 2003

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