Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine

V. A. Elyukhin; G. García-Salgado; R. Peña-Sierra; S. A. Nikishin

doi:10.1063/1.1565495

Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine

V. A. Elyukhin, G. García-Salgado, R. Peña-Sierra, S. A. Nikishin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A thermodynamic model of low-temperature molecular beam epitaxy of gallium nitride (GaN) with hydrazine was developed. The incident and desorbed fluxes were considered as a one-dimensional ideal gas. The thermodynamic affinity was used in order to estimate the deviation from thermodynamic equilibrium at the growth reactions.

Original language	English
Pages (from-to)	5185-5190
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	9
DOIs	https://doi.org/10.1063/1.1565495
State	Published - May 1 2003

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title = "Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine",

abstract = "A thermodynamic model of low-temperature molecular beam epitaxy of gallium nitride (GaN) with hydrazine was developed. The incident and desorbed fluxes were considered as a one-dimensional ideal gas. The thermodynamic affinity was used in order to estimate the deviation from thermodynamic equilibrium at the growth reactions.",

author = "Elyukhin, {V. A.} and G. Garc{\'i}a-Salgado and R. Pe{\~n}a-Sierra and Nikishin, {S. A.}",

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AU - Elyukhin, V. A.

AU - García-Salgado, G.

AU - Peña-Sierra, R.

AU - Nikishin, S. A.

PY - 2003/5/1

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N2 - A thermodynamic model of low-temperature molecular beam epitaxy of gallium nitride (GaN) with hydrazine was developed. The incident and desorbed fluxes were considered as a one-dimensional ideal gas. The thermodynamic affinity was used in order to estimate the deviation from thermodynamic equilibrium at the growth reactions.

AB - A thermodynamic model of low-temperature molecular beam epitaxy of gallium nitride (GaN) with hydrazine was developed. The incident and desorbed fluxes were considered as a one-dimensional ideal gas. The thermodynamic affinity was used in order to estimate the deviation from thermodynamic equilibrium at the growth reactions.

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DO - 10.1063/1.1565495

M3 - Article

AN - SCOPUS:0037986681

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SP - 5185

EP - 5190

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine

Abstract

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