A thermodynamic model of low-temperature molecular beam epitaxy of gallium nitride (GaN) with hydrazine was developed. The incident and desorbed fluxes were considered as a one-dimensional ideal gas. The thermodynamic affinity was used in order to estimate the deviation from thermodynamic equilibrium at the growth reactions.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|State||Published - May 1 2003|