Thermodynamic considerations in epitaxial growth of GaAs1-XNX solid solutions

Y. Qiu, S. A. Nikishin, H. Temkin, V. A. Elyukhin, Yu A. Kudriavtsev

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Abstract

We describe epitaxial growth of solid solutions of GaAs1-xNx with high nitrogen concentrations. The equilibrium constants of reactions needed for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic growth conditions. In addition, our calculations indicate that at room temperature the alloys of GaAs1-xNx are either unstable or metastable with respect to decomposition, for the entire range of compositions.

Original languageEnglish
Pages (from-to)2831-2833
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number21
DOIs
StatePublished - May 26 1997

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