Thermodynamic considerations in epitaxial growth of GaAs1-XNX solid solutions

Y. Qiu; S. A. Nikishin; H. Temkin; V. A. Elyukhin; Yu A. Kudriavtsev

doi:10.1063/1.119016

Thermodynamic considerations in epitaxial growth of GaAs_1-XN_X solid solutions

Y. Qiu, S. A. Nikishin, H. Temkin, V. A. Elyukhin, Yu A. Kudriavtsev

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We describe epitaxial growth of solid solutions of GaAs_1-xN_x with high nitrogen concentrations. The equilibrium constants of reactions needed for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic growth conditions. In addition, our calculations indicate that at room temperature the alloys of GaAs_1-xN_x are either unstable or metastable with respect to decomposition, for the entire range of compositions.

Original language	English
Pages (from-to)	2831-2833
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	21
DOIs	https://doi.org/10.1063/1.119016
State	Published - May 26 1997

Access to Document

10.1063/1.119016

Cite this

@article{0e78cc82123b4f4ca1038da342dc5112,

title = "Thermodynamic considerations in epitaxial growth of GaAs1-XNX solid solutions",

abstract = "We describe epitaxial growth of solid solutions of GaAs1-xNx with high nitrogen concentrations. The equilibrium constants of reactions needed for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic growth conditions. In addition, our calculations indicate that at room temperature the alloys of GaAs1-xNx are either unstable or metastable with respect to decomposition, for the entire range of compositions.",

author = "Y. Qiu and Nikishin, {S. A.} and H. Temkin and Elyukhin, {V. A.} and Kudriavtsev, {Yu A.}",

year = "1997",

month = may,

day = "26",

doi = "10.1063/1.119016",

language = "English",

volume = "70",

pages = "2831--2833",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "21",

}

TY - JOUR

T1 - Thermodynamic considerations in epitaxial growth of GaAs1-XNX solid solutions

AU - Qiu, Y.

AU - Nikishin, S. A.

AU - Temkin, H.

AU - Elyukhin, V. A.

AU - Kudriavtsev, Yu A.

PY - 1997/5/26

Y1 - 1997/5/26

N2 - We describe epitaxial growth of solid solutions of GaAs1-xNx with high nitrogen concentrations. The equilibrium constants of reactions needed for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic growth conditions. In addition, our calculations indicate that at room temperature the alloys of GaAs1-xNx are either unstable or metastable with respect to decomposition, for the entire range of compositions.

AB - We describe epitaxial growth of solid solutions of GaAs1-xNx with high nitrogen concentrations. The equilibrium constants of reactions needed for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic growth conditions. In addition, our calculations indicate that at room temperature the alloys of GaAs1-xNx are either unstable or metastable with respect to decomposition, for the entire range of compositions.

UR - http://www.scopus.com/inward/record.url?scp=8544283813&partnerID=8YFLogxK

U2 - 10.1063/1.119016

DO - 10.1063/1.119016

M3 - Article

AN - SCOPUS:8544283813

SN - 0003-6951

VL - 70

SP - 2831

EP - 2833

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Thermodynamic considerations in epitaxial growth of GaAs_1-XN_X solid solutions

Abstract

Access to Document

Other files and links

Fingerprint

Cite this