Thermally stable Schottky contacts on n -type GaN using Zr B 2

T. N. Oder, P. Martin, J. Y. Lin, H. X. Jiang, J. R. Williams, T. Isaacs-Smith

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20 Scopus citations

Abstract

The electrical properties and thermal stability of Zr B 2 Schottky contacts deposited on n -type GaN have been studied. As-deposited contacts had a barrier height of 0.80 eV, which decreased to 0.7 eV after annealing at 300 °C, and to 0.6 eV after additional annealing at 400 °C in nitrogen for 20 min. However, the barrier height remained at about 0.6 eV even when the diodes were annealed at 600 °C for 20 min. The Rutherford backscattering spectra of annealed contacts showed no reaction at the Zr B 2 GaN interface. These results make Zr B 2 GaN Schottky contacts attractive for high temperature device applications.

Original languageEnglish
Article number183505
JournalApplied Physics Letters
Volume88
Issue number18
DOIs
StatePublished - May 1 2006

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