Thermal annealing effects on the optical properties of high-indium InGaN epi-layers

Shih Wei Feng, Yung Chen Cheng, En Chiang Lin, Hsiang Chen Wang, C. C. Yang, Kung Jen Ma, Ching Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalConference articlepeer-review


We compared the optical and material properties of two high-indium InGaN thin layers between the as-grown and post-growth thermally annealed conditions. In one of the samples, the major part of photoluminescence spectrum was shifted from the original yellow band into the blue range upon thermal annealing. Cathodo-luminescence (CL) spectra showed that the spectral shift occurred essentially in the photons emitted from a shallow layer of the InGaN film. The deeper layer in the as-grown film contributed blue emission because it had been thermally annealed during the growth of the shallow layer. The spectral shift was mainly attributed to the shrinkage of cluster size through spinodal decomposition upon thermal annealing. The attribution was supported by the observations in the CL, X-ray diffraction (XRD), time-resolved photoluminescence (TRPL) and, high-resolution transmission electron microscopy (HRTEM) results.

Original languageEnglish
Pages (from-to)2654-2657
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
StatePublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003


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