We compared the optical and material properties of two high-indium InGaN thin layers between the as-grown and post-growth thermally annealed conditions. In one of the samples, the major part of photoluminescence spectrum was shifted from the original yellow band into the blue range upon thermal annealing. Cathodo-luminescence (CL) spectra showed that the spectral shift occurred essentially in the photons emitted from a shallow layer of the InGaN film. The deeper layer in the as-grown film contributed blue emission because it had been thermally annealed during the growth of the shallow layer. The spectral shift was mainly attributed to the shrinkage of cluster size through spinodal decomposition upon thermal annealing. The attribution was supported by the observations in the CL, X-ray diffraction (XRD), time-resolved photoluminescence (TRPL) and, high-resolution transmission electron microscopy (HRTEM) results.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|State||Published - 2003|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: May 25 2003 → May 30 2003