Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Shih Wei Feng; En Chiang Lin; Tsung Yi Tang; Yung Chen Cheng; Hsiang Chen Wang; C. C. Yang; Kung Jen Ma; Ching Hsing Shen; L. C. Chen; K. H. Kim; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1625434

Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Shih Wei Feng, En Chiang Lin, Tsung Yi Tang, Yung Chen Cheng, Hsiang Chen Wang, C. C. Yang, Kung Jen Ma, Ching Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The thermal annealing effects on the optical and material properties of an InGaN thin film were analyzed. On thermal annealing the photoluminescence spectrum was shifted from the original yellow band into the blue range. Cluster size reduction and quantum-confined Stark effect relaxation attributed to the spectral change. The results show a stronger quantum confinement and an increase in the effective band gap of the quantum dot due to the shrinkage of cluster size.

Original language	English
Pages (from-to)	3906-3908
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	19
DOIs	https://doi.org/10.1063/1.1625434
State	Published - Nov 10 2003

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@article{872adbb6f7ce4598a8215f0158cc18d4,

title = "Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31",

abstract = "The thermal annealing effects on the optical and material properties of an InGaN thin film were analyzed. On thermal annealing the photoluminescence spectrum was shifted from the original yellow band into the blue range. Cluster size reduction and quantum-confined Stark effect relaxation attributed to the spectral change. The results show a stronger quantum confinement and an increase in the effective band gap of the quantum dot due to the shrinkage of cluster size.",

author = "Feng, {Shih Wei} and Lin, {En Chiang} and Tang, {Tsung Yi} and Cheng, {Yung Chen} and Wang, {Hsiang Chen} and Yang, {C. C.} and Ma, {Kung Jen} and Shen, {Ching Hsing} and Chen, {L. C.} and Kim, {K. H.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2003",

month = nov,

day = "10",

doi = "10.1063/1.1625434",

language = "English",

volume = "83",

pages = "3906--3908",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "19",

}

TY - JOUR

T1 - Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

AU - Feng, Shih Wei

AU - Lin, En Chiang

AU - Tang, Tsung Yi

AU - Cheng, Yung Chen

AU - Wang, Hsiang Chen

AU - Yang, C. C.

AU - Ma, Kung Jen

AU - Shen, Ching Hsing

AU - Chen, L. C.

AU - Kim, K. H.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2003/11/10

Y1 - 2003/11/10

N2 - The thermal annealing effects on the optical and material properties of an InGaN thin film were analyzed. On thermal annealing the photoluminescence spectrum was shifted from the original yellow band into the blue range. Cluster size reduction and quantum-confined Stark effect relaxation attributed to the spectral change. The results show a stronger quantum confinement and an increase in the effective band gap of the quantum dot due to the shrinkage of cluster size.

AB - The thermal annealing effects on the optical and material properties of an InGaN thin film were analyzed. On thermal annealing the photoluminescence spectrum was shifted from the original yellow band into the blue range. Cluster size reduction and quantum-confined Stark effect relaxation attributed to the spectral change. The results show a stronger quantum confinement and an increase in the effective band gap of the quantum dot due to the shrinkage of cluster size.

UR - http://www.scopus.com/inward/record.url?scp=0344944967&partnerID=8YFLogxK

U2 - 10.1063/1.1625434

DO - 10.1063/1.1625434

M3 - Article

AN - SCOPUS:0344944967

VL - 83

SP - 3906

EP - 3908

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -

Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

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