Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Shih Wei Feng, En Chiang Lin, Tsung Yi Tang, Yung Chen Cheng, Hsiang Chen Wang, C. C. Yang, Kung Jen Ma, Ching Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, H. X. Jiang

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Abstract

The thermal annealing effects on the optical and material properties of an InGaN thin film were analyzed. On thermal annealing the photoluminescence spectrum was shifted from the original yellow band into the blue range. Cluster size reduction and quantum-confined Stark effect relaxation attributed to the spectral change. The results show a stronger quantum confinement and an increase in the effective band gap of the quantum dot due to the shrinkage of cluster size.

Original languageEnglish
Pages (from-to)3906-3908
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number19
DOIs
StatePublished - Nov 10 2003

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    Feng, S. W., Lin, E. C., Tang, T. Y., Cheng, Y. C., Wang, H. C., Yang, C. C., Ma, K. J., Shen, C. H., Chen, L. C., Kim, K. H., Lin, J. Y., & Jiang, H. X. (2003). Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31. Applied Physics Letters, 83(19), 3906-3908. https://doi.org/10.1063/1.1625434