Thermal analysis of 4H-SiC DMOSFET structure under resistive switching

Bejoy N. Pushpakaran, Stephen B. Bayne, Aderinto A. Ogunniyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

This research investigates the electro-thermal switching characteristics and lattice temperature profile of a two dimensional (2D) silicon carbide (4H-SiC polytype) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) cell under resistive switching using Silvaco ATLAS Technology Computer Aided Design (TCAD) physics based simulation software. Physics based models were included to account for recombination effects, bandgap narrowing, low field and high field mobility and lattice heating. The electro-thermal simulation was performed at an ambient lattice temperature of 300K. The device was simulated for 100 A/cm2 and 1000 A/cm2 drain current densities using a 1 kHz 50% duty cycle gate signal consisting of two cycles and 1.6 kHz 80% duty cycle signal consisting of three cycles. The analysis of lattice temperature profile revealed the formation of thermal hot spots in the vicinity of the (Junction Field Effect Transistor) JFET region in the DMOSFET structure during the switching phase and at the edge of the channel during the conduction phase. The magnitude of temperature rise was dependent on the drain current density used during the simulation.

Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
EditorsAllen L. Garner
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages523-526
Number of pages4
ISBN (Electronic)9781467373234
DOIs
StatePublished - Oct 1 2015
EventIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 - Santa Fe, United States
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

Conference

ConferenceIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
CountryUnited States
CitySanta Fe
Period06/1/1406/5/14

Keywords

  • DMOSFET
  • lattice temperature
  • physics based simulation
  • silicon carbide
  • silvaco
  • thermal hot spot

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    Pushpakaran, B. N., Bayne, S. B., & Ogunniyi, A. A. (2015). Thermal analysis of 4H-SiC DMOSFET structure under resistive switching. In A. L. Garner (Ed.), Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 (pp. 523-526). [7287327] (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPMHVC.2014.7287327