Theory of Defects in Si: Past, Present, and Challenges

S. K. Estreicher

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


Defects greatly affect the mechanical, electrical, optical, and magnetic properties of materials, especially semiconductors [1, 2]. There are many different types of defects, ranging from extended structures (e.g., grain boundaries, interfaces, dislocations, and precipitates), to complexes, to isolated native defects or impurities. The focus in this chapter is on localized defects such as vacancies, self-interstitials, isolated impurities, pairs and small complexes. These nanometer-size defects play many important roles and are the building blocks of larger defect structures. Understanding the properties of defects begins at this scale.

Original languageEnglish
Title of host publicationSpringer Series in Materials Science
Number of pages18
StatePublished - 2009

Publication series

NameSpringer Series in Materials Science
ISSN (Print)0933-033X
ISSN (Electronic)2196-2812


  • Dynamical Matrix
  • Electron Paramagnetic Resonance
  • Host Crystal
  • Molecular Dynamic Simulation
  • Solid State Phys


Dive into the research topics of 'Theory of Defects in Si: Past, Present, and Challenges'. Together they form a unique fingerprint.

Cite this