Theory of alloy broadening of deep levels in semiconductor alloys: Nitrogen in AlxGa1-xAs

William C. Ford, Charles W. Myles

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Abstract

The inhomogeneous alloy broadening of deep levels produced by substitutional impurities in crystalline semiconductor alloys is investigated with use of a technique based upon the embedded-cluster method and the theory of deep levels. Results are presented for the composition dependences of the center, width, and component lines of the alloy-broadened spectrum of nitrogen on the arsenic site in AlxGa1-xAs. For the present application, only the effects of the alloy disorder in the nearest-neighbor environment of the impurity are accounted for by the theory. In principle, however, the method outlined here is generalizable to account for such effects in the impuritys second- and more-distant-neighbor environments.

Original languageEnglish
Pages (from-to)927-931
Number of pages5
JournalPhysical Review B
Volume34
Issue number2
DOIs
StatePublished - 1986

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