Abstract
The ISiCiOi (C4) defect consists of a Si self-interstitial trapped at the interstitial carbon-oxygen CiOi pair (C3). The C4 defect is characterized by two infrared absorption lines at 940 and 1024 cm-1. The former is C-related and the latter is O-related. The intensity of these lines begins to drop above 150 °C and they disappear around 200 °C. In this work, we present the results of first-principles calculations of the configurations, binding energies, vibrational spectra, and estimated gap levels of C3 and C4.
Original language | English |
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Pages (from-to) | 163-166 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 401-402 |
DOIs | |
State | Published - Dec 15 2007 |
Keywords
- C4 defect
- Carbon
- Oxygen
- Self-interstitial
- Silicon
- Theory