Abstract
The ISiCiOi (C4) defect consists of a Si self-interstitial trapped at the interstitial carbon-oxygen CiOi pair (C3). The C4 defect is characterized by two infrared absorption lines at 940 and 1024 cm-1. The former is C-related and the latter is O-related. The intensity of these lines begins to drop above 150 °C and they disappear around 200 °C. In this work, we present the results of first-principles calculations of the configurations, binding energies, vibrational spectra, and estimated gap levels of C3 and C4.
| Original language | English |
|---|---|
| Pages (from-to) | 163-166 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 401-402 |
| DOIs | |
| State | Published - Dec 15 2007 |
Keywords
- C4 defect
- Carbon
- Oxygen
- Self-interstitial
- Silicon
- Theory
Fingerprint Dive into the research topics of 'Theoretical study of the C<sub>i</sub>O<sub>i</sub> and I<sub>si</sub>C<sub>i</sub>O<sub>i</sub> defects in Si'. Together they form a unique fingerprint.
Cite this
Backlund, D. J., & Estreicher, S. K. (2007). Theoretical study of the CiOi and IsiCiOi defects in Si. Physica B: Condensed Matter, 401-402, 163-166. https://doi.org/10.1016/j.physb.2007.08.137