@article{8ad909477a78481a973c45049f0cdcf7,
title = "Theoretical properties of the N vacancy in p -type GaN(Mg,H) at elevated temperatures",
abstract = "The elevated-temperature properties of the N vacancy in Mg-doped, p -type GaN containing H were modeled using atomic-configuration energies and phonon densities of states obtained with density-functional theory. This study encompassed both equilibrium thermodynamics and the rates of diffusion and reaction processes and included the influences of a number of bound complexes involving the vacancy, the Mg dopant, and H. A comparison was made with published experimental information. Our results indicate that N vacancies extensively compensate Mg acceptors at higher doping levels.",
author = "Myers, {S. M.} and Wright, {A. F.} and M. Sanati and Estreicher, {S. K.}",
note = "Funding Information: The authors benefited from discussions with R. R. Wixom, W. R. Wampler, and C. H. Seager. The work of two of the authors (S.M.M. and A.F.W.) was supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. Department of Energy. The efforts of one of the authors (S.K.E.) were supported in part by the R. A. Welch Foundation. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.",
year = "2006",
month = jun,
day = "1",
doi = "10.1063/1.2195894",
language = "English",
volume = "99",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AIP Publishing",
number = "11",
}