After a brief introduction, this chapter discusses the various theoretical techniques used today to describe hydrogen-related defects in semiconductors, with emphasis on the approximations involved and on the strengths and weaknesses of the various methods. The next section deals with isolated interstitial hydrogen. It begins with a summary of the experimental results obtained by muon spin rotation (μSR) in compound semiconductors, and continues with a description of the theoretical results published to date on interstitial H. The last section contains a review of the calculations done on hydrogen-containing complexes, mostly the passivation of acceptors and donors. The chapter ends with a brief summary and a few personal thoughts.
|Number of pages||44|
|Journal||Materials Science Forum|
|State||Published - 1994|