The strange behavior of interstitial H2 molecules Si and GaAs

S. K. Estreicher, J. L. McAfee, P. A. Fedders, J. M. Pruneda, P. Ordejón

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Interstitial H2 molecules have been observed in GaAs and in Si and behave very differently in the two hosts. In GaAs, H2 has rotational symmetry, a stretch frequency close to the free-molecule value, and the Raman spectrum exhibits the expected ortho/para splitting. In Si, the symmetry is C1, the stretch frequency is about 550cm-1 lower than that of free H2, and no ortho/para splitting is seen. In this paper, we use ab-initio molecular-dynamics simulations (SIESTA) to calculate the vibrational frequencies of H2 using linear response theory as well as the velocity-velocity autocorrelation function. We also study the interactions between H2 and Oi as well as paramagnetic H in Si. Based on these calculations and arguments about the formation process of H2, we argue that rapid H2⇌HT0 interactions are a possible candidate to explain the absence of ortho-H2 in Si.

Original languageEnglish
Pages (from-to)202-205
Number of pages4
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
StatePublished - Dec 2001

Keywords

  • Gallium arsenide
  • Hydrogen
  • Molecular dynamics
  • Silicon

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