The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates

A. Sedhain, L. Du, J. H. Edgar, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

39 Scopus citations

Abstract

The yellow color of bulk AlN crystals was found to be caused by the optical absorption of light with wavelengths shorter than that of yellow. This yellow impurity limits UV transparency and hence restricts the applications of AlN substrates for deep UV optoelectronic devices. Here, the optical properties of AlN epilayers, polycrystalline AlN, and bulk AlN single crystals have been investigated using photoluminescence (PL) spectroscopy to address the origin of this yellow appearance. An emission band with a linewidth of ∼0.3 eV (at 10 K) was observed at ∼2.78 eV. We propose that the origin of the yellow color in bulk AlN is due to a band-to-impurity absorption involving the excitation of electrons from the valence band to the doubly negative charged state, (V Al2-), of isolated aluminum vacancies, (VAl) 3-/2- described by VAl2-+hν= V Al3-+h+. In such a context, the reverse process is responsible for the 2.78 eV PL emission.

Original languageEnglish
Article number262104
JournalApplied Physics Letters
Volume95
Issue number26
DOIs
StatePublished - 2009

Fingerprint Dive into the research topics of 'The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates'. Together they form a unique fingerprint.

  • Cite this