The F^-+CH₃I → FCH₃ +I^- entrance channel potential energy surface Comparison of electronic structure methods

Engineering & Materials Science

• Potential energy surfaces 100%
• Electronic structure 89%
• Hydrogen 47%
• Discrete Fourier transforms 32%
• Binding energy 23%
• Substitution reactions 14%
• Experiments 10%
• Geometry 9%
• Computer simulation 8%
• Hot Temperature 7%
• Costs 5%

Chemistry

• Point Group C3v 78%
• CCSD 65%
• Potential Energy Surface 57%
• Electronic State 44%
• Transition State 24%
• Reaction Path 16%
• Nucleophilic Substitution 15%
• Binding Energy 13%
• Simulation 9%

Physics & Astronomy

• entrances 59%
• potential energy 51%
• electronic structure 45%
• hydrogen 14%
• binding energy 5%
• costs 4%
• heat 3%
• geometry 3%
• simulation 2%